A review of metrology for nanoelectronics

Kosmas Galatsis, Ron Potok, Kang L. Wang

Research output: Contribution to journalReview articlepeer-review

3 Citations (Scopus)

Abstract

This paper highlights some new and old techniques that will have important metrology inroads for nanoelectronics beyond CMOS. Traditional electron microscopy techniques are envisioned to remain and play a core role at the nanoscale level, and others such as probing techniques and special holographic imaging will further be enhanced and provide more diverse capabilities. The paper presents metrology techniques for beyond CMOS as presented at the First Metrology for Beyond CMOS workshop hosted by the Focus Center Research Program Center of Functional Engineered Nano Architectonics, the National Science Foundation Nanoscale Science and Engineering Center for Nanoprobing, and the California Institute of Technology (CNSI).

Original languageEnglish
Article number4369336
Pages (from-to)542-548
Number of pages7
JournalIEEE Transactions on Semiconductor Manufacturing
Volume20
Issue number4
DOIs
Publication statusPublished - 2007 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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