A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr x Si 1-x O 2 Gate dielectric and improved electrical and hysteresis performance

Chien Hsiung Hung, Shui-Jinn Wang, Pang Yi Liu, Chien Hung Wu, Nai Sheng Wu, Hao Ping Yan, Tseng Hsing Lin

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Fingerprint Dive into the research topics of 'A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr <sub>x</sub> Si <sub>1-x</sub> O <sub>2</sub> Gate dielectric and improved electrical and hysteresis performance'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy