A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr
x
Si
1-x
O
2
Gate dielectric and improved electrical and hysteresis performance
Chien Hsiung Hung, Shui-Jinn Wang, Pang Yi Liu, Chien Hung Wu, Nai Sheng Wu, Hao Ping Yan, Tseng Hsing Lin
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