A Sensitive Broadband (UV–vis–NIR) Perovskite Photodetector Using Topological Insulator as Electrodes

Feng Xia Liang, Lin Liang, Xing Yuan Zhao, Lin Bao Luo, Yu Hung Liu, Xiao Wei Tong, Zhi Xiang Zhang, Jung-Chun Huang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Here, a sensitive and broadband perovskite photodetector is developed by using crystalline topological insulator (TI) Bi 2 Se 3 film as the electrode, which is synthesized by molecular beam epitaxy (MBE). The as-fabricated Bi 2 Se 3 -FA 0.85 Cs 0.15 PbI 3 -Bi 2 Se 3 photodetector exhibits apparent sensitivity to 650 nm illumination with an on/off ratio of 0.8 × 10 5 and good reproducibility. The responsivity, external quantum efficiency, and specific detectivity are estimated to be 8.4 A W −1 , 1604%, and 1.7 × 10 13 Jones, respectively, which are better not only than the perovskite device using Au as electrode, but also than the majority of other perovskite materials based devices. It is also interesting to find that the TI based perovskite photodetector displays obvious photoresponse to near infrared light (NIR) with 980 nm due to contribution of TI Bi 2 Se 3 layer. It is believed that the present TI based perovskite photodetector holds promise for broadband and high-performance optoelectronic applications in the future.

Original languageEnglish
Article number1801392
JournalAdvanced Optical Materials
Volume7
Issue number4
DOIs
Publication statusPublished - 2019 Feb 19

Fingerprint

Photodetectors
Perovskite
photometers
insulators
broadband
Electrodes
electrodes
quantum efficiency
Quantum efficiency
molecular beam epitaxy
Molecular beam epitaxy
Optoelectronic devices
illumination
Lighting
perovskite
sensitivity
Crystalline materials
Infrared radiation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Liang, Feng Xia ; Liang, Lin ; Zhao, Xing Yuan ; Luo, Lin Bao ; Liu, Yu Hung ; Tong, Xiao Wei ; Zhang, Zhi Xiang ; Huang, Jung-Chun. / A Sensitive Broadband (UV–vis–NIR) Perovskite Photodetector Using Topological Insulator as Electrodes. In: Advanced Optical Materials. 2019 ; Vol. 7, No. 4.
@article{9a80989ca57e42dcbe7f308eb74e8888,
title = "A Sensitive Broadband (UV–vis–NIR) Perovskite Photodetector Using Topological Insulator as Electrodes",
abstract = "Here, a sensitive and broadband perovskite photodetector is developed by using crystalline topological insulator (TI) Bi 2 Se 3 film as the electrode, which is synthesized by molecular beam epitaxy (MBE). The as-fabricated Bi 2 Se 3 -FA 0.85 Cs 0.15 PbI 3 -Bi 2 Se 3 photodetector exhibits apparent sensitivity to 650 nm illumination with an on/off ratio of 0.8 × 10 5 and good reproducibility. The responsivity, external quantum efficiency, and specific detectivity are estimated to be 8.4 A W −1 , 1604{\%}, and 1.7 × 10 13 Jones, respectively, which are better not only than the perovskite device using Au as electrode, but also than the majority of other perovskite materials based devices. It is also interesting to find that the TI based perovskite photodetector displays obvious photoresponse to near infrared light (NIR) with 980 nm due to contribution of TI Bi 2 Se 3 layer. It is believed that the present TI based perovskite photodetector holds promise for broadband and high-performance optoelectronic applications in the future.",
author = "Liang, {Feng Xia} and Lin Liang and Zhao, {Xing Yuan} and Luo, {Lin Bao} and Liu, {Yu Hung} and Tong, {Xiao Wei} and Zhang, {Zhi Xiang} and Jung-Chun Huang",
year = "2019",
month = "2",
day = "19",
doi = "10.1002/adom.201801392",
language = "English",
volume = "7",
journal = "Advanced Optical Materials",
issn = "2195-1071",
publisher = "John Wiley and Sons Inc.",
number = "4",

}

A Sensitive Broadband (UV–vis–NIR) Perovskite Photodetector Using Topological Insulator as Electrodes. / Liang, Feng Xia; Liang, Lin; Zhao, Xing Yuan; Luo, Lin Bao; Liu, Yu Hung; Tong, Xiao Wei; Zhang, Zhi Xiang; Huang, Jung-Chun.

In: Advanced Optical Materials, Vol. 7, No. 4, 1801392, 19.02.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A Sensitive Broadband (UV–vis–NIR) Perovskite Photodetector Using Topological Insulator as Electrodes

AU - Liang, Feng Xia

AU - Liang, Lin

AU - Zhao, Xing Yuan

AU - Luo, Lin Bao

AU - Liu, Yu Hung

AU - Tong, Xiao Wei

AU - Zhang, Zhi Xiang

AU - Huang, Jung-Chun

PY - 2019/2/19

Y1 - 2019/2/19

N2 - Here, a sensitive and broadband perovskite photodetector is developed by using crystalline topological insulator (TI) Bi 2 Se 3 film as the electrode, which is synthesized by molecular beam epitaxy (MBE). The as-fabricated Bi 2 Se 3 -FA 0.85 Cs 0.15 PbI 3 -Bi 2 Se 3 photodetector exhibits apparent sensitivity to 650 nm illumination with an on/off ratio of 0.8 × 10 5 and good reproducibility. The responsivity, external quantum efficiency, and specific detectivity are estimated to be 8.4 A W −1 , 1604%, and 1.7 × 10 13 Jones, respectively, which are better not only than the perovskite device using Au as electrode, but also than the majority of other perovskite materials based devices. It is also interesting to find that the TI based perovskite photodetector displays obvious photoresponse to near infrared light (NIR) with 980 nm due to contribution of TI Bi 2 Se 3 layer. It is believed that the present TI based perovskite photodetector holds promise for broadband and high-performance optoelectronic applications in the future.

AB - Here, a sensitive and broadband perovskite photodetector is developed by using crystalline topological insulator (TI) Bi 2 Se 3 film as the electrode, which is synthesized by molecular beam epitaxy (MBE). The as-fabricated Bi 2 Se 3 -FA 0.85 Cs 0.15 PbI 3 -Bi 2 Se 3 photodetector exhibits apparent sensitivity to 650 nm illumination with an on/off ratio of 0.8 × 10 5 and good reproducibility. The responsivity, external quantum efficiency, and specific detectivity are estimated to be 8.4 A W −1 , 1604%, and 1.7 × 10 13 Jones, respectively, which are better not only than the perovskite device using Au as electrode, but also than the majority of other perovskite materials based devices. It is also interesting to find that the TI based perovskite photodetector displays obvious photoresponse to near infrared light (NIR) with 980 nm due to contribution of TI Bi 2 Se 3 layer. It is believed that the present TI based perovskite photodetector holds promise for broadband and high-performance optoelectronic applications in the future.

UR - http://www.scopus.com/inward/record.url?scp=85058218145&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058218145&partnerID=8YFLogxK

U2 - 10.1002/adom.201801392

DO - 10.1002/adom.201801392

M3 - Article

AN - SCOPUS:85058218145

VL - 7

JO - Advanced Optical Materials

JF - Advanced Optical Materials

SN - 2195-1071

IS - 4

M1 - 1801392

ER -