Abstract
Here, a sensitive and broadband perovskite photodetector is developed by using crystalline topological insulator (TI) Bi 2 Se 3 film as the electrode, which is synthesized by molecular beam epitaxy (MBE). The as-fabricated Bi 2 Se 3 -FA 0.85 Cs 0.15 PbI 3 -Bi 2 Se 3 photodetector exhibits apparent sensitivity to 650 nm illumination with an on/off ratio of 0.8 × 10 5 and good reproducibility. The responsivity, external quantum efficiency, and specific detectivity are estimated to be 8.4 A W −1 , 1604%, and 1.7 × 10 13 Jones, respectively, which are better not only than the perovskite device using Au as electrode, but also than the majority of other perovskite materials based devices. It is also interesting to find that the TI based perovskite photodetector displays obvious photoresponse to near infrared light (NIR) with 980 nm due to contribution of TI Bi 2 Se 3 layer. It is believed that the present TI based perovskite photodetector holds promise for broadband and high-performance optoelectronic applications in the future.
| Original language | English |
|---|---|
| Article number | 1801392 |
| Journal | Advanced Optical Materials |
| Volume | 7 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2019 Feb 19 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
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A Sensitive Broadband (UV–vis–NIR) Perovskite Photodetector Using Topological Insulator as Electrodes. / Liang, Feng Xia; Liang, Lin; Zhao, Xing Yuan; Luo, Lin Bao; Liu, Yu Hung; Tong, Xiao Wei; Zhang, Zhi Xiang; Huang, Jung-Chun.
In: Advanced Optical Materials, Vol. 7, No. 4, 1801392, 19.02.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - A Sensitive Broadband (UV–vis–NIR) Perovskite Photodetector Using Topological Insulator as Electrodes
AU - Liang, Feng Xia
AU - Liang, Lin
AU - Zhao, Xing Yuan
AU - Luo, Lin Bao
AU - Liu, Yu Hung
AU - Tong, Xiao Wei
AU - Zhang, Zhi Xiang
AU - Huang, Jung-Chun
PY - 2019/2/19
Y1 - 2019/2/19
N2 - Here, a sensitive and broadband perovskite photodetector is developed by using crystalline topological insulator (TI) Bi 2 Se 3 film as the electrode, which is synthesized by molecular beam epitaxy (MBE). The as-fabricated Bi 2 Se 3 -FA 0.85 Cs 0.15 PbI 3 -Bi 2 Se 3 photodetector exhibits apparent sensitivity to 650 nm illumination with an on/off ratio of 0.8 × 10 5 and good reproducibility. The responsivity, external quantum efficiency, and specific detectivity are estimated to be 8.4 A W −1 , 1604%, and 1.7 × 10 13 Jones, respectively, which are better not only than the perovskite device using Au as electrode, but also than the majority of other perovskite materials based devices. It is also interesting to find that the TI based perovskite photodetector displays obvious photoresponse to near infrared light (NIR) with 980 nm due to contribution of TI Bi 2 Se 3 layer. It is believed that the present TI based perovskite photodetector holds promise for broadband and high-performance optoelectronic applications in the future.
AB - Here, a sensitive and broadband perovskite photodetector is developed by using crystalline topological insulator (TI) Bi 2 Se 3 film as the electrode, which is synthesized by molecular beam epitaxy (MBE). The as-fabricated Bi 2 Se 3 -FA 0.85 Cs 0.15 PbI 3 -Bi 2 Se 3 photodetector exhibits apparent sensitivity to 650 nm illumination with an on/off ratio of 0.8 × 10 5 and good reproducibility. The responsivity, external quantum efficiency, and specific detectivity are estimated to be 8.4 A W −1 , 1604%, and 1.7 × 10 13 Jones, respectively, which are better not only than the perovskite device using Au as electrode, but also than the majority of other perovskite materials based devices. It is also interesting to find that the TI based perovskite photodetector displays obvious photoresponse to near infrared light (NIR) with 980 nm due to contribution of TI Bi 2 Se 3 layer. It is believed that the present TI based perovskite photodetector holds promise for broadband and high-performance optoelectronic applications in the future.
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U2 - 10.1002/adom.201801392
DO - 10.1002/adom.201801392
M3 - Article
AN - SCOPUS:85058218145
VL - 7
JO - Advanced Optical Materials
JF - Advanced Optical Materials
SN - 2195-1071
IS - 4
M1 - 1801392
ER -