TY - JOUR
T1 - A Sensitive Broadband (UV–vis–NIR) Perovskite Photodetector Using Topological Insulator as Electrodes
AU - Liang, Feng Xia
AU - Liang, Lin
AU - Zhao, Xing Yuan
AU - Luo, Lin Bao
AU - Liu, Yu Hung
AU - Tong, Xiao Wei
AU - Zhang, Zhi Xiang
AU - Huang, J. C.Andrew
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China (NSFC, Nos. 61575059, 61675062, and 21501038), the Fundamental Research Funds for the Central Universities (JZ2018HGXC0001), the National Science Council of Taiwan (NSC 100-2112-M-006-018-MY3) and the Open Foundation of Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices (4500-411104/011).
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/2/19
Y1 - 2019/2/19
N2 - Here, a sensitive and broadband perovskite photodetector is developed by using crystalline topological insulator (TI) Bi 2 Se 3 film as the electrode, which is synthesized by molecular beam epitaxy (MBE). The as-fabricated Bi 2 Se 3 -FA 0.85 Cs 0.15 PbI 3 -Bi 2 Se 3 photodetector exhibits apparent sensitivity to 650 nm illumination with an on/off ratio of 0.8 × 10 5 and good reproducibility. The responsivity, external quantum efficiency, and specific detectivity are estimated to be 8.4 A W −1 , 1604%, and 1.7 × 10 13 Jones, respectively, which are better not only than the perovskite device using Au as electrode, but also than the majority of other perovskite materials based devices. It is also interesting to find that the TI based perovskite photodetector displays obvious photoresponse to near infrared light (NIR) with 980 nm due to contribution of TI Bi 2 Se 3 layer. It is believed that the present TI based perovskite photodetector holds promise for broadband and high-performance optoelectronic applications in the future.
AB - Here, a sensitive and broadband perovskite photodetector is developed by using crystalline topological insulator (TI) Bi 2 Se 3 film as the electrode, which is synthesized by molecular beam epitaxy (MBE). The as-fabricated Bi 2 Se 3 -FA 0.85 Cs 0.15 PbI 3 -Bi 2 Se 3 photodetector exhibits apparent sensitivity to 650 nm illumination with an on/off ratio of 0.8 × 10 5 and good reproducibility. The responsivity, external quantum efficiency, and specific detectivity are estimated to be 8.4 A W −1 , 1604%, and 1.7 × 10 13 Jones, respectively, which are better not only than the perovskite device using Au as electrode, but also than the majority of other perovskite materials based devices. It is also interesting to find that the TI based perovskite photodetector displays obvious photoresponse to near infrared light (NIR) with 980 nm due to contribution of TI Bi 2 Se 3 layer. It is believed that the present TI based perovskite photodetector holds promise for broadband and high-performance optoelectronic applications in the future.
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U2 - 10.1002/adom.201801392
DO - 10.1002/adom.201801392
M3 - Article
AN - SCOPUS:85058218145
VL - 7
JO - Advanced Optical Materials
JF - Advanced Optical Materials
SN - 2195-1071
IS - 4
M1 - 1801392
ER -