A Si nanowire photovoltaic device prepared by selective electroless etching

T. Y. Tsai; S. J. Chang; T. J. Hsueh; C. L. Hsu; W. Y. Weng; J. M. Shieh

doi:10.1109/TNANO.2012.2214399

A Si nanowire photovoltaic device prepared by selective electroless etching

T. Y. Tsai
, S. J. Chang
, T. J. Hsueh
, C. L. Hsu
, W. Y. Weng
, J. M. Shieh

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

This study reports the preparation of Si nanowires (SiNWs) by selective electroless etching and fabrication of photovoltaic (PV) cells. It was found that the SiNWs with 3μm average length and 100nm average diameter were formed only in the areas not covered by the Cr electrodes. It was also found that average reflectance in the 400-1000nm wavelength range reduced from 35 to around 2 with the SiNWs. Furthermore, it was found that we could enhance the short-circuit current density of the PV cells from 11.5 to 21.8mA/cm² and enhance conversion efficiency of the PV cells from 4.62 to 8.15 using the selective electroless etching.

Original language	English
Article number	6294450
Pages (from-to)	1148-1150
Number of pages	3
Journal	IEEE Transactions on Nanotechnology
Volume	11
Issue number	6
DOIs	https://doi.org/10.1109/TNANO.2012.2214399
Publication status	Published - 2012

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2012.2214399

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title = "A Si nanowire photovoltaic device prepared by selective electroless etching",

abstract = "This study reports the preparation of Si nanowires (SiNWs) by selective electroless etching and fabrication of photovoltaic (PV) cells. It was found that the SiNWs with 3μm average length and 100nm average diameter were formed only in the areas not covered by the Cr electrodes. It was also found that average reflectance in the 400-1000nm wavelength range reduced from 35 to around 2 with the SiNWs. Furthermore, it was found that we could enhance the short-circuit current density of the PV cells from 11.5 to 21.8mA/cm2 and enhance conversion efficiency of the PV cells from 4.62 to 8.15 using the selective electroless etching.",

author = "Tsai, \{T. Y.\} and Chang, \{S. J.\} and Hsueh, \{T. J.\} and Hsu, \{C. L.\} and Weng, \{W. Y.\} and Shieh, \{J. M.\}",

note = "Funding Information: Manuscript received July 12, 2011; revised June 27, 2012; accepted July 19, 2012. Date of publication September 4, 2012; date of current version November 16, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center and in part by the Center for Micro/Nano Science and Technology, National Cheng Kung University, under projects from the Ministry of Education, Taiwan. This work was also supported in part by the National Nano Devices Laboratory. The part of the work was also supported by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, for financially supporting this research under Contract 100-D0204-6 and the LED Lighting and Research Center, National Cheng Kung University, for the assistance in related measurements, and in part by the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract NSC 100-2221-E-492-022-. The review of this paper was arranged by Associate Editor M. M. De Souza.",

year = "2012",

doi = "10.1109/TNANO.2012.2214399",

language = "English",

volume = "11",

pages = "1148--1150",

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AU - Tsai, T. Y.

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AU - Hsu, C. L.

AU - Weng, W. Y.

AU - Shieh, J. M.

N1 - Funding Information: Manuscript received July 12, 2011; revised June 27, 2012; accepted July 19, 2012. Date of publication September 4, 2012; date of current version November 16, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center and in part by the Center for Micro/Nano Science and Technology, National Cheng Kung University, under projects from the Ministry of Education, Taiwan. This work was also supported in part by the National Nano Devices Laboratory. The part of the work was also supported by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, for financially supporting this research under Contract 100-D0204-6 and the LED Lighting and Research Center, National Cheng Kung University, for the assistance in related measurements, and in part by the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract NSC 100-2221-E-492-022-. The review of this paper was arranged by Associate Editor M. M. De Souza.

PY - 2012

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N2 - This study reports the preparation of Si nanowires (SiNWs) by selective electroless etching and fabrication of photovoltaic (PV) cells. It was found that the SiNWs with 3μm average length and 100nm average diameter were formed only in the areas not covered by the Cr electrodes. It was also found that average reflectance in the 400-1000nm wavelength range reduced from 35 to around 2 with the SiNWs. Furthermore, it was found that we could enhance the short-circuit current density of the PV cells from 11.5 to 21.8mA/cm2 and enhance conversion efficiency of the PV cells from 4.62 to 8.15 using the selective electroless etching.

AB - This study reports the preparation of Si nanowires (SiNWs) by selective electroless etching and fabrication of photovoltaic (PV) cells. It was found that the SiNWs with 3μm average length and 100nm average diameter were formed only in the areas not covered by the Cr electrodes. It was also found that average reflectance in the 400-1000nm wavelength range reduced from 35 to around 2 with the SiNWs. Furthermore, it was found that we could enhance the short-circuit current density of the PV cells from 11.5 to 21.8mA/cm2 and enhance conversion efficiency of the PV cells from 4.62 to 8.15 using the selective electroless etching.

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A Si nanowire photovoltaic device prepared by selective electroless etching

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