@inproceedings{ba10416b711949d985aebdb8328d26f6,
title = "A-Si:H gate driver circuit for in-cell touch panels driven by multi-V blanking method",
abstract = "A gate driver circuit for in-cell touch panels to avoid the thin-film transistor stress problem is presented. An 85 °C TFT model is developed and HSPICE verifies the functionality of the circuit. Simulation shows the maximum deviation of transition times is only 0.65%.",
author = "Cheng, {Mao Hsun} and Tseng, {Chin Hsien} and Lee, {Ching En} and Lin, {Chih Lung}",
note = "Publisher Copyright: copyright {\textcopyright} 2016 Society of Information Display. All rights reserved.; 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 ; Conference date: 07-12-2016 Through 09-12-2016",
year = "2018",
language = "English",
series = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",
publisher = "Society for Information Display",
pages = "2238--2239",
booktitle = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",
address = "United States",
}