A-Si:H gate driver circuit for in-cell touch panels driven by multi-V blanking method

Mao Hsun Cheng, Chin Hsien Tseng, Ching En Lee, Chih Lung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A gate driver circuit for in-cell touch panels to avoid the thin-film transistor stress problem is presented. An 85 °C TFT model is developed and HSPICE verifies the functionality of the circuit. Simulation shows the maximum deviation of transition times is only 0.65%.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages2238-2239
Number of pages2
ISBN (Electronic)9781510845510
Publication statusPublished - 2018 Jan 1
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 2016 Dec 72016 Dec 9

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume4

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period16-12-0716-12-09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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