A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system

Day Shan Liu; Yu Ko Liao; Cheng Yang Wu; Fuh Shyang Juang; Ching Ting Lee

doi:10.4028/0-87849-990-3.439

A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system

Day Shan Liu, Yu Ko Liao, Cheng Yang Wu, Fuh Shyang Juang, Ching Ting Lee

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O₂ gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.

Original language	English
Title of host publication	Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture
Publisher	Trans Tech Publications Ltd
Pages	439-444
Number of pages	6
Edition	PART 1
ISBN (Print)	0878499903, 9780878499908
DOIs	https://doi.org/10.4028/0-87849-990-3.439
Publication status	Published - 2006 Jan 1
Event	2005 International Conference on Advanced Manufacture, ICAM2005 - Taipei, R.O.C., Taiwan Duration: 2005 Nov 28 → 2005 Dec 2

Publication series

Name	Materials Science Forum
Number	PART 1
Volume	505-507
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	2005 International Conference on Advanced Manufacture, ICAM2005
Country	Taiwan
City	Taipei, R.O.C.
Period	05-11-28 → 05-12-02

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

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Liu, D. S., Liao, Y. K., Wu, C. Y., Juang, F. S., & Lee, C. T. (2006). A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. In Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture (PART 1 ed., pp. 439-444). (Materials Science Forum; Vol. 505-507, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-990-3.439

Liu, Day Shan ; Liao, Yu Ko ; Wu, Cheng Yang ; Juang, Fuh Shyang ; Lee, Ching Ting. / A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1. ed. Trans Tech Publications Ltd, 2006. pp. 439-444 (Materials Science Forum; PART 1).

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title = "A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system",

abstract = "A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.",

author = "Liu, {Day Shan} and Liao, {Yu Ko} and Wu, {Cheng Yang} and Juang, {Fuh Shyang} and Lee, {Ching Ting}",

year = "2006",

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booktitle = "Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture",

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Liu, DS, Liao, YK, Wu, CY, Juang, FS & Lee, CT 2006, A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. in Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1 edn, Materials Science Forum, no. PART 1, vol. 505-507, Trans Tech Publications Ltd, pp. 439-444, 2005 International Conference on Advanced Manufacture, ICAM2005, Taipei, R.O.C., Taiwan, 05-11-28. https://doi.org/10.4028/0-87849-990-3.439

A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. / Liu, Day Shan; Liao, Yu Ko; Wu, Cheng Yang; Juang, Fuh Shyang; Lee, Ching Ting.

Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1. ed. Trans Tech Publications Ltd, 2006. p. 439-444 (Materials Science Forum; Vol. 505-507, No. PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system

AU - Liu, Day Shan

AU - Liao, Yu Ko

AU - Wu, Cheng Yang

AU - Juang, Fuh Shyang

AU - Lee, Ching Ting

PY - 2006/1/1

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N2 - A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.

AB - A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.

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BT - Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture

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Liu DS, Liao YK, Wu CY, Juang FS, Lee CT. A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. In Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1 ed. Trans Tech Publications Ltd. 2006. p. 439-444. (Materials Science Forum; PART 1). https://doi.org/10.4028/0-87849-990-3.439