Abstract
A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.
| Original language | English |
|---|---|
| Title of host publication | Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture |
| Pages | 439-444 |
| Number of pages | 6 |
| Edition | PART 1 |
| Publication status | Published - 2006 Dec 1 |
| Event | 2005 International Conference on Advanced Manufacture, ICAM2005 - Taipei, R.O.C., Taiwan Duration: 2005 Nov 28 → 2005 Dec 2 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Number | PART 1 |
| Volume | 505-507 |
| ISSN (Print) | 0255-5476 |
Other
| Other | 2005 International Conference on Advanced Manufacture, ICAM2005 |
|---|---|
| Country | Taiwan |
| City | Taipei, R.O.C. |
| Period | 05-11-28 → 05-12-02 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. / Liu, Day Shan; Liao, Yu Ko; Wu, Cheng Yang; Juang, Fuh Shyang; Lee, Ching-Ting.
Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1. ed. 2006. p. 439-444 (Materials Science Forum; Vol. 505-507, No. PART 1).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system
AU - Liu, Day Shan
AU - Liao, Yu Ko
AU - Wu, Cheng Yang
AU - Juang, Fuh Shyang
AU - Lee, Ching-Ting
PY - 2006/12/1
Y1 - 2006/12/1
N2 - A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.
AB - A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.
UR - http://www.scopus.com/inward/record.url?scp=35348844615&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35348844615&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:35348844615
SN - 0878499903
SN - 9780878499908
T3 - Materials Science Forum
SP - 439
EP - 444
BT - Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture
ER -