A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system

Day Shan Liu, Yu Ko Liao, Cheng Yang Wu, Fuh Shyang Juang, Ching-Ting Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.

Original languageEnglish
Title of host publicationProgress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture
Pages439-444
Number of pages6
EditionPART 1
Publication statusPublished - 2006 Dec 1
Event2005 International Conference on Advanced Manufacture, ICAM2005 - Taipei, R.O.C., Taiwan
Duration: 2005 Nov 282005 Dec 2

Publication series

NameMaterials Science Forum
NumberPART 1
Volume505-507
ISSN (Print)0255-5476

Other

Other2005 International Conference on Advanced Manufacture, ICAM2005
CountryTaiwan
CityTaipei, R.O.C.
Period05-11-2805-12-02

Fingerprint

Hard coatings
Silicon oxides
Plasma enhanced chemical vapor deposition
Oxide films
Hardness
Polymethyl Methacrylate
Substrates
Surface roughness
Flow of gases
Raw materials
Evaporation
Oxygen

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Liu, D. S., Liao, Y. K., Wu, C. Y., Juang, F. S., & Lee, C-T. (2006). A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. In Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture (PART 1 ed., pp. 439-444). (Materials Science Forum; Vol. 505-507, No. PART 1).
Liu, Day Shan ; Liao, Yu Ko ; Wu, Cheng Yang ; Juang, Fuh Shyang ; Lee, Ching-Ting. / A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1. ed. 2006. pp. 439-444 (Materials Science Forum; PART 1).
@inproceedings{e8e53c0ed2604ad28a941bb962fc2f48,
title = "A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system",
abstract = "A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.",
author = "Liu, {Day Shan} and Liao, {Yu Ko} and Wu, {Cheng Yang} and Juang, {Fuh Shyang} and Ching-Ting Lee",
year = "2006",
month = "12",
day = "1",
language = "English",
isbn = "0878499903",
series = "Materials Science Forum",
number = "PART 1",
pages = "439--444",
booktitle = "Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture",
edition = "PART 1",

}

Liu, DS, Liao, YK, Wu, CY, Juang, FS & Lee, C-T 2006, A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. in Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1 edn, Materials Science Forum, no. PART 1, vol. 505-507, pp. 439-444, 2005 International Conference on Advanced Manufacture, ICAM2005, Taipei, R.O.C., Taiwan, 05-11-28.

A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. / Liu, Day Shan; Liao, Yu Ko; Wu, Cheng Yang; Juang, Fuh Shyang; Lee, Ching-Ting.

Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1. ed. 2006. p. 439-444 (Materials Science Forum; Vol. 505-507, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system

AU - Liu, Day Shan

AU - Liao, Yu Ko

AU - Wu, Cheng Yang

AU - Juang, Fuh Shyang

AU - Lee, Ching-Ting

PY - 2006/12/1

Y1 - 2006/12/1

N2 - A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.

AB - A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (∼ 3.36 nm) and PC (∼ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.

UR - http://www.scopus.com/inward/record.url?scp=35348844615&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35348844615&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:35348844615

SN - 0878499903

SN - 9780878499908

T3 - Materials Science Forum

SP - 439

EP - 444

BT - Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture

ER -

Liu DS, Liao YK, Wu CY, Juang FS, Lee C-T. A silicon oxide hard coating deposited on flexible substrate by TMS - PECVD system. In Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1 ed. 2006. p. 439-444. (Materials Science Forum; PART 1).