A simple approach to reduce interlayer formation of sputtered HF-based gate dielectrics by nitrogen incorporation

C. H. Lu, Yi Sheng Lai, Jen-Sue Chen

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

In this work, we have demonstrated a simple approach to suppress interfacial layer (IL) formation for HfOx and HfOxN y gate dielectrics by sputtering HfOx and HfNx films, respectively, followed by further annealing. The material characteristics of dielectric films were investigated by glancing incident angle X-ray diffraction (GIAXRD), high-resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry. Both HfO x and HfOxNy films show amorphous structures after annealing up to 700C; nevertheless, the HfOxNy film presents the superiority to prevent interfacial layer (IL) formation over the HfOx film. Formation of a self-doped nitrogen-contained IL in the HfOxNy dielectric stack is detected by XPS analysis. Furthermore, the HfOxNy dielectric layer presents higher refractive index (about 2.0) than that of HfOx (about 1.8) in the range of visible light, indicative of its denser structure. It is suggested that a high nitrogen-doped HfOxNy dielectric stack can be achieved by this method, showing better properties than the HfOx one. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)425-430
Number of pages6
JournalECS Transactions
Volume1
Issue number5
DOIs
Publication statusPublished - 2005 Dec 1
Event3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

Fingerprint

Gate dielectrics
Nitrogen
X ray photoelectron spectroscopy
Annealing
Dielectric films
Spectroscopic ellipsometry
Amorphous films
High resolution transmission electron microscopy
Sputtering
Refractive index
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

@article{2908dd1f0efd444ebbee70ea47fa1812,
title = "A simple approach to reduce interlayer formation of sputtered HF-based gate dielectrics by nitrogen incorporation",
abstract = "In this work, we have demonstrated a simple approach to suppress interfacial layer (IL) formation for HfOx and HfOxN y gate dielectrics by sputtering HfOx and HfNx films, respectively, followed by further annealing. The material characteristics of dielectric films were investigated by glancing incident angle X-ray diffraction (GIAXRD), high-resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry. Both HfO x and HfOxNy films show amorphous structures after annealing up to 700C; nevertheless, the HfOxNy film presents the superiority to prevent interfacial layer (IL) formation over the HfOx film. Formation of a self-doped nitrogen-contained IL in the HfOxNy dielectric stack is detected by XPS analysis. Furthermore, the HfOxNy dielectric layer presents higher refractive index (about 2.0) than that of HfOx (about 1.8) in the range of visible light, indicative of its denser structure. It is suggested that a high nitrogen-doped HfOxNy dielectric stack can be achieved by this method, showing better properties than the HfOx one. copyright The Electrochemical Society.",
author = "Lu, {C. H.} and Lai, {Yi Sheng} and Jen-Sue Chen",
year = "2005",
month = "12",
day = "1",
doi = "10.1149/1.2209292",
language = "English",
volume = "1",
pages = "425--430",
journal = "ECS Transactions",
issn = "1938-5862",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

A simple approach to reduce interlayer formation of sputtered HF-based gate dielectrics by nitrogen incorporation. / Lu, C. H.; Lai, Yi Sheng; Chen, Jen-Sue.

In: ECS Transactions, Vol. 1, No. 5, 01.12.2005, p. 425-430.

Research output: Contribution to journalConference article

TY - JOUR

T1 - A simple approach to reduce interlayer formation of sputtered HF-based gate dielectrics by nitrogen incorporation

AU - Lu, C. H.

AU - Lai, Yi Sheng

AU - Chen, Jen-Sue

PY - 2005/12/1

Y1 - 2005/12/1

N2 - In this work, we have demonstrated a simple approach to suppress interfacial layer (IL) formation for HfOx and HfOxN y gate dielectrics by sputtering HfOx and HfNx films, respectively, followed by further annealing. The material characteristics of dielectric films were investigated by glancing incident angle X-ray diffraction (GIAXRD), high-resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry. Both HfO x and HfOxNy films show amorphous structures after annealing up to 700C; nevertheless, the HfOxNy film presents the superiority to prevent interfacial layer (IL) formation over the HfOx film. Formation of a self-doped nitrogen-contained IL in the HfOxNy dielectric stack is detected by XPS analysis. Furthermore, the HfOxNy dielectric layer presents higher refractive index (about 2.0) than that of HfOx (about 1.8) in the range of visible light, indicative of its denser structure. It is suggested that a high nitrogen-doped HfOxNy dielectric stack can be achieved by this method, showing better properties than the HfOx one. copyright The Electrochemical Society.

AB - In this work, we have demonstrated a simple approach to suppress interfacial layer (IL) formation for HfOx and HfOxN y gate dielectrics by sputtering HfOx and HfNx films, respectively, followed by further annealing. The material characteristics of dielectric films were investigated by glancing incident angle X-ray diffraction (GIAXRD), high-resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry. Both HfO x and HfOxNy films show amorphous structures after annealing up to 700C; nevertheless, the HfOxNy film presents the superiority to prevent interfacial layer (IL) formation over the HfOx film. Formation of a self-doped nitrogen-contained IL in the HfOxNy dielectric stack is detected by XPS analysis. Furthermore, the HfOxNy dielectric layer presents higher refractive index (about 2.0) than that of HfOx (about 1.8) in the range of visible light, indicative of its denser structure. It is suggested that a high nitrogen-doped HfOxNy dielectric stack can be achieved by this method, showing better properties than the HfOx one. copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33845268615&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845268615&partnerID=8YFLogxK

U2 - 10.1149/1.2209292

DO - 10.1149/1.2209292

M3 - Conference article

AN - SCOPUS:33845268615

VL - 1

SP - 425

EP - 430

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 5

ER -