A simple gate-dielectric fabrication process for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Han Yin Liu; Bo Yi Chou; Wei Chou Hsu; Ching Sung Lee; Chiu Sheng Ho

doi:10.1109/LED.2012.2197370

A simple gate-dielectric fabrication process for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Han Yin Liu, Bo Yi Chou, Wei Chou Hsu, Ching Sung Lee, Chiu Sheng Ho

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

This letter reports a simple processing method for fabricating metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide (H ₂O ₂) oxidation technique. Aluminum oxide (AlO _x) was formed on the surface of the AlGaN barrier as the gate dielectric of the MOS-gate structure. By using the capacitance-voltage measurement, the dielectric constant (κ) of AlO _x was determined to be 9.2. The present MOS-HEMT has demonstrated enhanced saturation drain current density at V _GS = 0 _V (I _DSS0) of 552.3 mA/mm, maximum extrinsic transconductance (g _max) of 136 mS/mm, wide gate voltage swing of 2.9 V, and two-terminal gate-drain breakdown/turn-on voltages (BV _GD/V _on) of-132.2/1.82 V.

Original language	English
Article number	6213490
Pages (from-to)	997-999
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1109/LED.2012.2197370
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2012.2197370

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title = "A simple gate-dielectric fabrication process for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors",

abstract = "This letter reports a simple processing method for fabricating metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide (H 2O 2) oxidation technique. Aluminum oxide (AlO x) was formed on the surface of the AlGaN barrier as the gate dielectric of the MOS-gate structure. By using the capacitance-voltage measurement, the dielectric constant (κ) of AlO x was determined to be 9.2. The present MOS-HEMT has demonstrated enhanced saturation drain current density at V GS = 0 V (I DSS0) of 552.3 mA/mm, maximum extrinsic transconductance (g max) of 136 mS/mm, wide gate voltage swing of 2.9 V, and two-terminal gate-drain breakdown/turn-on voltages (BV GD/V on) of-132.2/1.82 V.",

author = "Liu, {Han Yin} and Chou, {Bo Yi} and Hsu, {Wei Chou} and Lee, {Ching Sung} and Ho, {Chiu Sheng}",

note = "Funding Information: Manuscript received March 1, 2012; revised April 23, 2012; accepted April 24, 2012. Date of publication June 8, 2012; date of current version June 22, 2012. This work was supported in part by the National Science Council, Taiwan, under Contract NSC 100-2221-E-006-039-MY3 and Contract NSC 100-2221-E-006-041-MY3 and in part by the Bureau of Energy, Ministry of Economic Affairs, under Contract 101-D0204-6. The review of this letter was arranged by Editor A. Ortiz-Conde.",

year = "2012",

doi = "10.1109/LED.2012.2197370",

language = "English",

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journal = "IEEE Electron Device Letters",

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AU - Liu, Han Yin

AU - Chou, Bo Yi

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Ho, Chiu Sheng

N1 - Funding Information: Manuscript received March 1, 2012; revised April 23, 2012; accepted April 24, 2012. Date of publication June 8, 2012; date of current version June 22, 2012. This work was supported in part by the National Science Council, Taiwan, under Contract NSC 100-2221-E-006-039-MY3 and Contract NSC 100-2221-E-006-041-MY3 and in part by the Bureau of Energy, Ministry of Economic Affairs, under Contract 101-D0204-6. The review of this letter was arranged by Editor A. Ortiz-Conde.

PY - 2012

Y1 - 2012

N2 - This letter reports a simple processing method for fabricating metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide (H 2O 2) oxidation technique. Aluminum oxide (AlO x) was formed on the surface of the AlGaN barrier as the gate dielectric of the MOS-gate structure. By using the capacitance-voltage measurement, the dielectric constant (κ) of AlO x was determined to be 9.2. The present MOS-HEMT has demonstrated enhanced saturation drain current density at V GS = 0 V (I DSS0) of 552.3 mA/mm, maximum extrinsic transconductance (g max) of 136 mS/mm, wide gate voltage swing of 2.9 V, and two-terminal gate-drain breakdown/turn-on voltages (BV GD/V on) of-132.2/1.82 V.

AB - This letter reports a simple processing method for fabricating metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide (H 2O 2) oxidation technique. Aluminum oxide (AlO x) was formed on the surface of the AlGaN barrier as the gate dielectric of the MOS-gate structure. By using the capacitance-voltage measurement, the dielectric constant (κ) of AlO x was determined to be 9.2. The present MOS-HEMT has demonstrated enhanced saturation drain current density at V GS = 0 V (I DSS0) of 552.3 mA/mm, maximum extrinsic transconductance (g max) of 136 mS/mm, wide gate voltage swing of 2.9 V, and two-terminal gate-drain breakdown/turn-on voltages (BV GD/V on) of-132.2/1.82 V.

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A simple gate-dielectric fabrication process for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

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