This letter reports a simple processing method for fabricating metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide (H 2O 2) oxidation technique. Aluminum oxide (AlO x) was formed on the surface of the AlGaN barrier as the gate dielectric of the MOS-gate structure. By using the capacitance-voltage measurement, the dielectric constant (κ) of AlO x was determined to be 9.2. The present MOS-HEMT has demonstrated enhanced saturation drain current density at V GS = 0 V (I DSS0) of 552.3 mA/mm, maximum extrinsic transconductance (g max) of 136 mS/mm, wide gate voltage swing of 2.9 V, and two-terminal gate-drain breakdown/turn-on voltages (BV GD/V on) of-132.2/1.82 V.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering