Keyphrases
Fabrication Methods
100%
Gate Dielectric
100%
AlGaN-GaN
100%
MOS-HEMT
100%
Hydrogen Peroxide
66%
Aluminum Oxide
66%
Turn-on Voltage
33%
Dielectric Constant
33%
Processing Methods
33%
Gate Voltage Swing
33%
Gate Structure
33%
Drain Current Density
33%
Capacitance-voltage Measurements
33%
Two-terminal
33%
Saturation Drain Current
33%
Extrinsic Transconductance
33%
AlGaN Barrier
33%
Oxidation Method
33%
Material Science
Dielectric Material
100%
Metal Oxide
100%
Electron Mobility
100%
Transistor
100%
Oxide Semiconductor
100%
Aluminum Oxide
66%
Surface (Surface Science)
33%
Density
33%
Capacitance
33%
Hydrogen Peroxide
33%
Permittivity
33%
Engineering
Metal Oxide Semiconductor
100%
Gate Dielectric
100%
Aluminum Oxide
66%
Dielectrics
33%
Processing Method
33%
Gate Voltage
33%
Current Drain
33%
Max
33%
Electrical Measurement
33%
Physics
Metal Oxide Semiconductor
100%
High Electron Mobility Transistors
100%
Dielectric Material
100%
Permittivity
33%