A simple gate-dielectric fabrication process for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Engineering & Materials Science

• Gate dielectrics 100%
• Oxide semiconductors 83%
• High electron mobility transistors 81%
• Aluminum oxide 67%
• Capacitance measurement 50%
• Hydrogen peroxide 45%
• Metals 45%
• Voltage measurement 44%
• Transconductance 42%
• Electric potential 36%
• Permittivity 35%
• Current density 34%
• Oxidation 31%

Chemical Compounds

• Drain Current 54%
• Transconductance 54%
• Voltage 50%
• Dielectric Constant 32%
• Dielectric Material 30%
• Hydrogen Peroxide 27%
• Current Density 25%
• Oxidation Reaction 15%
• Surface 11%