This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H2O2) oxidation technique is adopted to complete the passivation. The results of chemical analysis suggest that the Al and Ga dangling bonds react with the oxygen atoms. This passivation process effectively reduces the side-wall surface states, which also suppress the dark current to 11 pA. In addition, the photo response and the UV to visible rejection ratio of the PD with H2O2 passivation process are enhanced to 8.1×10-3 A/W and 2.3 × 103 when the PD is biased at - 10 V. The noise equivalent power and the detectivity are determined to be 1.63 × 10-8 W and 1.33 × 108 cmHz 0.5 W-1. The simple passivation technique improves the AlGaN/GaN UV PD performances effectively.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials