A simple passivation technique for AlGaN/GaN ultraviolet schottky barrier photodetector

Han Yin Liu; Wei Chou Hsu; Bo Yi Chou; Yi Hsuan Wang

doi:10.1109/LPT.2013.2290130

A simple passivation technique for AlGaN/GaN ultraviolet schottky barrier photodetector

Han Yin Liu, Wei Chou Hsu, Bo Yi Chou, Yi Hsuan Wang

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H₂O₂) oxidation technique is adopted to complete the passivation. The results of chemical analysis suggest that the Al and Ga dangling bonds react with the oxygen atoms. This passivation process effectively reduces the side-wall surface states, which also suppress the dark current to 11 pA. In addition, the photo response and the UV to visible rejection ratio of the PD with H₂O₂ passivation process are enhanced to 8.1×10^-3 A/W and 2.3 × 10³ when the PD is biased at - 10 V. The noise equivalent power and the detectivity are determined to be 1.63 × 10^-8 W and 1.33 × 10⁸ cmHz ^0.5 W^-1. The simple passivation technique improves the AlGaN/GaN UV PD performances effectively.

Original language	English
Article number	6663601
Pages (from-to)	138-141
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	26
Issue number	2
DOIs	https://doi.org/10.1109/LPT.2013.2290130
Publication status	Published - 2014 Jan 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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abstract = "This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H2O2) oxidation technique is adopted to complete the passivation. The results of chemical analysis suggest that the Al and Ga dangling bonds react with the oxygen atoms. This passivation process effectively reduces the side-wall surface states, which also suppress the dark current to 11 pA. In addition, the photo response and the UV to visible rejection ratio of the PD with H2O2 passivation process are enhanced to 8.1×10-3 A/W and 2.3 × 103 when the PD is biased at - 10 V. The noise equivalent power and the detectivity are determined to be 1.63 × 10-8 W and 1.33 × 108 cmHz 0.5 W-1. The simple passivation technique improves the AlGaN/GaN UV PD performances effectively.",

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AU - Chou, Bo Yi

AU - Wang, Yi Hsuan

PY - 2014/1/15

Y1 - 2014/1/15

N2 - This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H2O2) oxidation technique is adopted to complete the passivation. The results of chemical analysis suggest that the Al and Ga dangling bonds react with the oxygen atoms. This passivation process effectively reduces the side-wall surface states, which also suppress the dark current to 11 pA. In addition, the photo response and the UV to visible rejection ratio of the PD with H2O2 passivation process are enhanced to 8.1×10-3 A/W and 2.3 × 103 when the PD is biased at - 10 V. The noise equivalent power and the detectivity are determined to be 1.63 × 10-8 W and 1.33 × 108 cmHz 0.5 W-1. The simple passivation technique improves the AlGaN/GaN UV PD performances effectively.

AB - This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H2O2) oxidation technique is adopted to complete the passivation. The results of chemical analysis suggest that the Al and Ga dangling bonds react with the oxygen atoms. This passivation process effectively reduces the side-wall surface states, which also suppress the dark current to 11 pA. In addition, the photo response and the UV to visible rejection ratio of the PD with H2O2 passivation process are enhanced to 8.1×10-3 A/W and 2.3 × 103 when the PD is biased at - 10 V. The noise equivalent power and the detectivity are determined to be 1.63 × 10-8 W and 1.33 × 108 cmHz 0.5 W-1. The simple passivation technique improves the AlGaN/GaN UV PD performances effectively.

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A simple passivation technique for AlGaN/GaN ultraviolet schottky barrier photodetector

Abstract

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