A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors

M. Hong, J. P. Mannaerts, J. M. Hong, R. J. Fischer, K. Tai, J. Kwo, J. M. Vandenberg, Yeong-Her Wang, J. Gamelin

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28 Citations (Scopus)

Abstract

A novel method has been used to smooth out the energy band discontinuity at the heterojunction of AlAs and GaAs in quarter-wave distributed Bragg reflectors (DBRs) by linearly grading the Al and Ga compositions. This has been achieved by simply varying the cell temperatures of Al and Ga. No shutter operation was used during the MBE growth of these DBR mirrors. Low series resistance at a moderate doping (3 x 10 18 cm -3 ) and high optical reflectivity have been obtained in the p-type DBRs using our approach. These p-DBRs were characterized by high-resolution X-ray diffraction, optical reflectivity, and electrical measurements.

Original languageEnglish
Pages (from-to)1071-1075
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - 1991 May 2

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Hong, M., Mannaerts, J. P., Hong, J. M., Fischer, R. J., Tai, K., Kwo, J., Vandenberg, J. M., Wang, Y-H., & Gamelin, J. (1991). A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors. Journal of Crystal Growth, 111(1-4), 1071-1075. https://doi.org/10.1016/0022-0248(91)91135-W