A simulation study on process sensitivity of a line tunnel field-effect transistor

Amey M. Walke, William G. Vandenberghe, Kuo Hsing Kao, Anne Vandooren, Guido Groeseneken

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A process sensitivity study of a steep subthreshold swing line tunnel field-effect transistor is presented for the first time using 2-D quantum-mechanical device simulations. The impact of various process parameters on the device transfer characteristics is presented with the help of process splits. A study of the thermal budget also shows that an increase in epitaxial growth thermal budget degrades the device performance by increasing the tunneling onset voltage V\rm TON and the off-current. Through process simulation and Plackett-Burman design of experiment (PB-DOE), the epitaxial layer thickness of the channel was identified as the most critical parameter in device processing. A thickness variation from 2 to 3 nm in the highly ( \hbox{7} \times \hbox{10}^{19}\ \hbox{cm}^{-3}) doped epitaxial was found to cause \sim500-mV change in the tunneling onset voltage. It was found that an increase in doping concentration in the epitaxial layer to reduce quantum confinement effects will lead to an increase in the sensitivity of the device to the thickness of the epitaxial layer. A thicker epitaxial layer (5-6 nm) with lower doping concentration is recommended for reduced epitaxial layer variation sensitivity.

Original languageEnglish
Article number6461086
Pages (from-to)1019-1027
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume60
Issue number3
DOIs
Publication statusPublished - 2013 Feb 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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