A single 3.3 v 2.4-2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Jui Chieh Chiu, Che Hung Lin, Chuan Chien Hsu, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

Abstract

A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaAs PHEMT MMIC as high gain and high linearity power amplifiers for wireless local-area network applications.

Original languageEnglish
Pages (from-to)2809-2812
Number of pages4
JournalJournal of Optoelectronics and Advanced Materials
Volume9
Issue number9
Publication statusPublished - 2007 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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