A single 3.3 v 2.4-2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor

Chen Kuo Chu; Hou Kuei Huang; Hong Zhi Liu; Jui Chieh Chiu; Che Hung Lin; Chuan Chien Hsu; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang

A single 3.3 v 2.4-2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Jui Chieh Chiu, Che Hung Lin, Chuan Chien Hsu, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

Abstract

A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaAs PHEMT MMIC as high gain and high linearity power amplifiers for wireless local-area network applications.

Original language	English
Pages (from-to)	2809-2812
Number of pages	4
Journal	Journal of Optoelectronics and Advanced Materials
Volume	9
Issue number	9
Publication status	Published - 2007 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "A single 3.3 v 2.4-2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor",

abstract = "A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaAs PHEMT MMIC as high gain and high linearity power amplifiers for wireless local-area network applications.",

author = "Chu, {Chen Kuo} and Huang, {Hou Kuei} and Liu, {Hong Zhi} and Chiu, {Jui Chieh} and Lin, {Che Hung} and Hsu, {Chuan Chien} and Wu, {Chang Luen} and Chang, {Chian Sern} and Wang, {Yeong Her}",

year = "2007",

month = sep,

language = "English",

volume = "9",

pages = "2809--2812",

journal = "Journal of Optoelectronics and Advanced Materials",

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publisher = "National Institute of Optoelectronics",

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T1 - A single 3.3 v 2.4-2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor

AU - Chu, Chen Kuo

AU - Huang, Hou Kuei

AU - Liu, Hong Zhi

AU - Chiu, Jui Chieh

AU - Lin, Che Hung

AU - Hsu, Chuan Chien

AU - Wu, Chang Luen

AU - Chang, Chian Sern

AU - Wang, Yeong Her

PY - 2007/9

Y1 - 2007/9

N2 - A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaAs PHEMT MMIC as high gain and high linearity power amplifiers for wireless local-area network applications.

AB - A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaAs PHEMT MMIC as high gain and high linearity power amplifiers for wireless local-area network applications.

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JO - Journal of Optoelectronics and Advanced Materials

JF - Journal of Optoelectronics and Advanced Materials

IS - 9

ER -

A single 3.3 v 2.4-2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor

Abstract

All Science Journal Classification (ASJC) codes

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