A single-bias 2W PHEMT MMIC by gate zero-bias technique for C band applications

C. H. Lin; H. Z. Liu; H. K. Huang; C. K. Chu; M. P. Houng; Y. H. Wang; C. C. Liu; C. H. Chang; C. L. Wu; C. S. Chang

doi:10.1109/EDSSC.2005.1635238

A single-bias 2W PHEMT MMIC by gate zero-bias technique for C band applications

C. H. Lin, H. Z. Liu, H. K. Huang, C. K. Chu, M. P. Houng, Y. H. Wang, C. C. Liu, C. H. Chang, C. L. Wu, C. S. Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A single supply, fully matched high linearity 2W power amplifier utilizing the gate zero-bias power PHEMT technology is developed for 5.8GHz WLAN applications. At Vgs= 0 V, Vds=5 V, the power amplifier with 33dBm of peak P_1dB, 25% of PAE, 12.8dB small-signal gain can be seen. Moreover, high-linearity with 43dBm third-order intercept point at a single carrier output power level of 23dBm is also achieved.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	191-194
Number of pages	4
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635238
Publication status	Published - 2005 Jan 1
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 2005 Dec 19 → 2005 Dec 21

Publication series

Name	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Howloon
Period	05-12-19 → 05-12-21

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2005.1635238

Cite this

Lin, C. H., Liu, H. Z., Huang, H. K., Chu, C. K., Houng, M. P., Wang, Y. H., Liu, C. C., Chang, C. H., Wu, C. L., & Chang, C. S. (2005). A single-bias 2W PHEMT MMIC by gate zero-bias technique for C band applications. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 191-194). Article 1635238 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635238

@inproceedings{60907a8d19a04bb787fa91c9fa7f43c3,

title = "A single-bias 2W PHEMT MMIC by gate zero-bias technique for C band applications",

abstract = "A single supply, fully matched high linearity 2W power amplifier utilizing the gate zero-bias power PHEMT technology is developed for 5.8GHz WLAN applications. At Vgs= 0 V, Vds=5 V, the power amplifier with 33dBm of peak P1dB, 25% of PAE, 12.8dB small-signal gain can be seen. Moreover, high-linearity with 43dBm third-order intercept point at a single carrier output power level of 23dBm is also achieved.",

author = "Lin, {C. H.} and Liu, {H. Z.} and Huang, {H. K.} and Chu, {C. K.} and Houng, {M. P.} and Wang, {Y. H.} and Liu, {C. C.} and Chang, {C. H.} and Wu, {C. L.} and Chang, {C. S.}",

year = "2005",

month = jan,

day = "1",

doi = "10.1109/EDSSC.2005.1635238",

language = "English",

isbn = "0780393392",

series = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "191--194",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

address = "United States",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 19-12-2005 Through 21-12-2005",

}

Lin, CH, Liu, HZ, Huang, HK, Chu, CK, Houng, MP, Wang, YH, Liu, CC, Chang, CH, Wu, CL & Chang, CS 2005, A single-bias 2W PHEMT MMIC by gate zero-bias technique for C band applications. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635238, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., pp. 191-194, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05-12-19. https://doi.org/10.1109/EDSSC.2005.1635238

A single-bias 2W PHEMT MMIC by gate zero-bias technique for C band applications. / Lin, C. H.; Liu, H. Z.; Huang, H. K. et al.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 191-194 1635238 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A single-bias 2W PHEMT MMIC by gate zero-bias technique for C band applications

AU - Lin, C. H.

AU - Liu, H. Z.

AU - Huang, H. K.

AU - Chu, C. K.

AU - Houng, M. P.

AU - Wang, Y. H.

AU - Liu, C. C.

AU - Chang, C. H.

AU - Wu, C. L.

AU - Chang, C. S.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - A single supply, fully matched high linearity 2W power amplifier utilizing the gate zero-bias power PHEMT technology is developed for 5.8GHz WLAN applications. At Vgs= 0 V, Vds=5 V, the power amplifier with 33dBm of peak P1dB, 25% of PAE, 12.8dB small-signal gain can be seen. Moreover, high-linearity with 43dBm third-order intercept point at a single carrier output power level of 23dBm is also achieved.

AB - A single supply, fully matched high linearity 2W power amplifier utilizing the gate zero-bias power PHEMT technology is developed for 5.8GHz WLAN applications. At Vgs= 0 V, Vds=5 V, the power amplifier with 33dBm of peak P1dB, 25% of PAE, 12.8dB small-signal gain can be seen. Moreover, high-linearity with 43dBm third-order intercept point at a single carrier output power level of 23dBm is also achieved.

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DO - 10.1109/EDSSC.2005.1635238

M3 - Conference contribution

SN - 0780393392

SN - 9780780393394

T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

SP - 191

EP - 194

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 19 December 2005 through 21 December 2005

ER -

Lin CH, Liu HZ, Huang HK, Chu CK, Houng MP, Wang YH et al. A single-bias 2W PHEMT MMIC by gate zero-bias technique for C band applications. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 191-194. 1635238. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). doi: 10.1109/EDSSC.2005.1635238

A single-bias 2W PHEMT MMIC by gate zero-bias technique for C band applications

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