A fully matched, 2-W high linearity amplifier monolithic microwave integrated circuit, by using quasi-enhancement mode technology of AlGaAs/InGaAs/ GaAs pseudomorphic high electron mobility transistors, is demonstrated for wireless local area network applications. At Vgs = 0 V, V ds = 5 V, this power amplifier has achieved 14-dB small-signal gain, 33-dBm output power at 1-dB gain compression point, and 34.5-dBm saturated output power with 35 % power added efficiency at 5.8 GHz. Moreover, high-linearity with 45.2-dBm third-order intercept point is also achieved.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering