Abstract
In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14 GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.
Original language | English |
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Article number | 1637485 |
Pages (from-to) | 330-332 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 16 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2006 Jun 1 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering