A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs

Hong Zhi Liu; Che Hung Lin; Chen Kuo Chu; Hou Kuei Huang; Mau Phon Houng; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang

doi:10.1109/LMWC.2006.875627

A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs

Hong Zhi Liu, Che Hung Lin, Chen Kuo Chu, Hou Kuei Huang, Mau Phon Houng, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14 GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.

Original language	English
Article number	1637485
Pages (from-to)	330-332
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	16
Issue number	6
DOIs	https://doi.org/10.1109/LMWC.2006.875627
Publication status	Published - 2006 Jun 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{dc66860b3b6c48feb5e46786d2410afb,

title = "A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs",

abstract = "In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14 GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.",

author = "Liu, {Hong Zhi} and Lin, {Che Hung} and Chu, {Chen Kuo} and Huang, {Hou Kuei} and Houng, {Mau Phon} and Chang, {Ching Hsueh} and Wu, {Chang Luen} and Chang, {Chian Sern} and Wang, {Yeong Her}",

year = "2006",

month = jun,

day = "1",

doi = "10.1109/LMWC.2006.875627",

language = "English",

volume = "16",

pages = "330--332",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs. / Liu, Hong Zhi; Lin, Che Hung; Chu, Chen Kuo; Huang, Hou Kuei; Houng, Mau Phon; Chang, Ching Hsueh; Wu, Chang Luen; Chang, Chian Sern; Wang, Yeong Her.

In: IEEE Microwave and Wireless Components Letters, Vol. 16, No. 6, 1637485, 01.06.2006, p. 330-332.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs

AU - Liu, Hong Zhi

AU - Lin, Che Hung

AU - Chu, Chen Kuo

AU - Huang, Hou Kuei

AU - Houng, Mau Phon

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

AU - Wang, Yeong Her

PY - 2006/6/1

Y1 - 2006/6/1

N2 - In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14 GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.

AB - In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14 GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.

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