Through the use of tin (Sn) based solder balls and patterned laser lift-off technique, a metal substrate technology was proposed for the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs). Advantages including reserving the merits of metallic substrate and simplifying the fabrication processes of vertical-structured GaN-based LEDs were demonstrated. As compared to conventional sapphire substrate GaN-based LEDs, the fabricated VM-LEDs with an emission area of 620×620 μ m2 show an increase in light output power about 145.36% at 350 mA with a significant decrease in forward voltage from 4.51 to 3.46 V.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)