A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes

Hon Yi Kuo; Shui Jinn Wang; Pei Ren Wang; Kai Ming Uang; Tron Min Chen; Hon Kuan

doi:10.1063/1.2834373

A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes

Hon Yi Kuo
, Shui Jinn Wang
, Pei Ren Wang
, Kai Ming Uang
, Tron Min Chen
, Hon Kuan

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Through the use of tin (Sn) based solder balls and patterned laser lift-off technique, a metal substrate technology was proposed for the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs). Advantages including reserving the merits of metallic substrate and simplifying the fabrication processes of vertical-structured GaN-based LEDs were demonstrated. As compared to conventional sapphire substrate GaN-based LEDs, the fabricated VM-LEDs with an emission area of 620×620 μ m2 show an increase in light output power about 145.36% at 350 mA with a significant decrease in forward voltage from 4.51 to 3.46 V.

Original language	English
Article number	021105
Journal	Applied Physics Letters
Volume	92
Issue number	2
DOIs	https://doi.org/10.1063/1.2834373
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2834373

Cite this

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title = "A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes",

abstract = "Through the use of tin (Sn) based solder balls and patterned laser lift-off technique, a metal substrate technology was proposed for the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs). Advantages including reserving the merits of metallic substrate and simplifying the fabrication processes of vertical-structured GaN-based LEDs were demonstrated. As compared to conventional sapphire substrate GaN-based LEDs, the fabricated VM-LEDs with an emission area of 620×620 μ m2 show an increase in light output power about 145.36\% at 350 mA with a significant decrease in forward voltage from 4.51 to 3.46 V.",

author = "Kuo, \{Hon Yi\} and Wang, \{Shui Jinn\} and Wang, \{Pei Ren\} and Uang, \{Kai Ming\} and Chen, \{Tron Min\} and Hon Kuan",

note = "Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, Republic of China, under Contract No. NSC 95-2215-E-006-014 and the Landmark Project Grant for NCKU{\textquoteright}s Top-University Project.",

year = "2008",

doi = "10.1063/1.2834373",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes

AU - Kuo, Hon Yi

AU - Wang, Shui Jinn

AU - Wang, Pei Ren

AU - Uang, Kai Ming

AU - Chen, Tron Min

AU - Kuan, Hon

N1 - Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, Republic of China, under Contract No. NSC 95-2215-E-006-014 and the Landmark Project Grant for NCKU’s Top-University Project.

PY - 2008

Y1 - 2008

N2 - Through the use of tin (Sn) based solder balls and patterned laser lift-off technique, a metal substrate technology was proposed for the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs). Advantages including reserving the merits of metallic substrate and simplifying the fabrication processes of vertical-structured GaN-based LEDs were demonstrated. As compared to conventional sapphire substrate GaN-based LEDs, the fabricated VM-LEDs with an emission area of 620×620 μ m2 show an increase in light output power about 145.36% at 350 mA with a significant decrease in forward voltage from 4.51 to 3.46 V.

AB - Through the use of tin (Sn) based solder balls and patterned laser lift-off technique, a metal substrate technology was proposed for the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs). Advantages including reserving the merits of metallic substrate and simplifying the fabrication processes of vertical-structured GaN-based LEDs were demonstrated. As compared to conventional sapphire substrate GaN-based LEDs, the fabricated VM-LEDs with an emission area of 620×620 μ m2 show an increase in light output power about 145.36% at 350 mA with a significant decrease in forward voltage from 4.51 to 3.46 V.

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DO - 10.1063/1.2834373

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

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ER -

A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes

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