A solar-blind β-Ga2O33 Nanowire Photodetector

W. Y. Weng; T. J. Hsueh; S. J. Chang; G. J. Huang; S. P. Chang

doi:10.1109/LPT.2010.2044570

A solar-blind β-Ga₂O₃3 Nanowire Photodetector

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, S. P. Chang

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

The authors report the growth of β-Ga₂O₃3 nanowires by heating the GaNsapphire template and the fabrication of a β-Ga₂O₃3 nanowire photodetector by depositing interdigitated contact electrodes. It was found that the average length and diameter of the β-Ga₂O₃3 nanowires were around 10 μm and 100 nm, respectively. It was also found that the fabricated photodetector was solar-blind with sharp cutoff at 255 nm. With an incident light wavelength of 255 nm and an applied bias of 10 V, it was found that measured responsivity of the photodetector was 8.0×10^-4 A/W.

Original language	English
Article number	53
Pages (from-to)	709-711
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2010.2044570
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2010.2044570

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title = "A solar-blind β-Ga2O33 Nanowire Photodetector",

abstract = "The authors report the growth of β-Ga2O33 nanowires by heating the GaNsapphire template and the fabrication of a β-Ga2O33 nanowire photodetector by depositing interdigitated contact electrodes. It was found that the average length and diameter of the β-Ga2O33 nanowires were around 10 μm and 100 nm, respectively. It was also found that the fabricated photodetector was solar-blind with sharp cutoff at 255 nm. With an incident light wavelength of 255 nm and an applied bias of 10 V, it was found that measured responsivity of the photodetector was 8.0×10-4 A/W.",

author = "Weng, {W. Y.} and Hsueh, {T. J.} and Chang, {S. J.} and Huang, {G. J.} and Chang, {S. P.}",

note = "Funding Information: Manuscript received January 05, 2010; revised February 12, 2010; accepted February 24, 2010. Date of publication March 15, 2010; date of current version April 21, 2010. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.",

year = "2010",

doi = "10.1109/LPT.2010.2044570",

language = "English",

volume = "22",

pages = "709--711",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A solar-blind β-Ga2O33 Nanowire Photodetector

AU - Weng, W. Y.

AU - Hsueh, T. J.

AU - Chang, S. J.

AU - Huang, G. J.

AU - Chang, S. P.

N1 - Funding Information: Manuscript received January 05, 2010; revised February 12, 2010; accepted February 24, 2010. Date of publication March 15, 2010; date of current version April 21, 2010. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.

PY - 2010

Y1 - 2010

N2 - The authors report the growth of β-Ga2O33 nanowires by heating the GaNsapphire template and the fabrication of a β-Ga2O33 nanowire photodetector by depositing interdigitated contact electrodes. It was found that the average length and diameter of the β-Ga2O33 nanowires were around 10 μm and 100 nm, respectively. It was also found that the fabricated photodetector was solar-blind with sharp cutoff at 255 nm. With an incident light wavelength of 255 nm and an applied bias of 10 V, it was found that measured responsivity of the photodetector was 8.0×10-4 A/W.

AB - The authors report the growth of β-Ga2O33 nanowires by heating the GaNsapphire template and the fabrication of a β-Ga2O33 nanowire photodetector by depositing interdigitated contact electrodes. It was found that the average length and diameter of the β-Ga2O33 nanowires were around 10 μm and 100 nm, respectively. It was also found that the fabricated photodetector was solar-blind with sharp cutoff at 255 nm. With an incident light wavelength of 255 nm and an applied bias of 10 V, it was found that measured responsivity of the photodetector was 8.0×10-4 A/W.

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JF - IEEE Photonics Technology Letters

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A solar-blind β-Ga₂O₃3 Nanowire Photodetector

Abstract

All Science Journal Classification (ASJC) codes

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