A stacked memory device on logic 3D technology for ultra-high-density data storage

Jiyoung Kim, Augustin J. Hong, Sung Min Kim, Kyeong Sik Shin, Emil B. Song, Yongha Hwang, Faxian Xiu, Kosmas Galatsis, Chi On Chui, Rob N. Candler, Siyoung Choi, Joo Tae Moon, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures.

Original languageEnglish
Article number254006
JournalNanotechnology
Volume22
Issue number25
DOIs
Publication statusPublished - 2011 Jun 24

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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