A steep subthreshold swing technique for gate-all-around SOI MOSFETs

C. Y. Chen, J. T. Lin, M. H. Chiang, W. C. Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A device design technique for silicon nanowire MOSFETs for low power capability beyond 10 nm technology node is demonstrated using 3D numerical simulation and physical analysis. The subthreshold kink effect enables the use of low supply bias without compromising performance. The kink-assisted methodology overcomes the fundamental and thermal voltage-limited subthreshold swing (SS).

Original languageEnglish
Title of host publicationAdvanced CMOS-Compatible Semiconductor Devices 17
EditorsY. Omura, J. A. Martino, J. P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B. Y. Nguyen
PublisherElectrochemical Society Inc.
Pages87-92
Number of pages6
Edition5
ISBN (Electronic)9781607685951
DOIs
Publication statusPublished - 2015
EventSymposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting - Chicago, United States
Duration: 2015 May 242015 May 28

Publication series

NameECS Transactions
Number5
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting
Country/TerritoryUnited States
CityChicago
Period15-05-2415-05-28

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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