In this study, Al was added into Si matrix as the buffer (Si90Al10, Si75Al25 and Si55Al45) by co-sputtering to prevent the dramatic volumetric expansion of a pure Si thin film anode during lithiation and delithiation. The electrochemical properties and structural characteristics of Si(100-x)Alx (at.%) films at room temperature and 55°C were investigated. At 55°C, the higher lithiation and delithiation quantity was accompanied by a dramatic volumetric expansion which increased the capacity but degraded the stability. In addition, the resistance against electrochemical reactions was controlled by the diffusion rate of lithium ions at 55°C. After charge-discharge, the Si-Al thin film had undergone recrystallization and had been affecting the 55°C charge-discharge characteristics of the thin film anodes.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry