Abstract
In this study, Al was added into Si matrix as the buffer (Si90Al10, Si75Al25 and Si55Al45) by co-sputtering to prevent the dramatic volumetric expansion of a pure Si thin film anode during lithiation and delithiation. The electrochemical properties and structural characteristics of Si(100-x)Alx (at.%) films at room temperature and 55°C were investigated. At 55°C, the higher lithiation and delithiation quantity was accompanied by a dramatic volumetric expansion which increased the capacity but degraded the stability. In addition, the resistance against electrochemical reactions was controlled by the diffusion rate of lithium ions at 55°C. After charge-discharge, the Si-Al thin film had undergone recrystallization and had been affecting the 55°C charge-discharge characteristics of the thin film anodes.
Original language | English |
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Pages (from-to) | 79-84 |
Number of pages | 6 |
Journal | Surface and Coatings Technology |
Volume | 215 |
DOIs | |
Publication status | Published - 2013 Jan 25 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry