A study of composite-passivation of an InGaPGaAs heterojunction bipolar transistor

Ssu I. Fu, Shiou Ying Cheng, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Chih Hung Yen, Wen Chau Liu

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8 Citations (Scopus)


The temperature-dependent direct current (dc) characteristics and radio frequency performance of an InGaPGaAs heterojunction bipolar transistor with the composite passivations on base surface are studied and demonstrated. For comparison, the characteristics of other samples with different treatments on the base surfaces are also included in this work. The device with composite passivations, i.e., the ledge structure and sulfur treatment, shows the best performance and related thermal stabilities on dc current gain ΒF, base surface recombination current density JSR, and base current ideality factor nB. Experimentally, the device with composite passivations can be operated in the extremely low collector current (IC ≤ 10-9 A) regime with a useful current gain (ΒF >10). Moreover, this device exhibits improved microwave characteristics and hence is promising for low-power electronic and communication applications.

Original languageEnglish
Article number046611JES
Pages (from-to)G938-G942
JournalJournal of the Electrochemical Society
Issue number11
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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