A study of composite-passivation of an InGaPGaAs heterojunction bipolar transistor

Ssu I. Fu; Shiou Ying Cheng; Po Hsien Lai; Yan Ying Tsai; Ching Wen Hung; Chih Hung Yen; Wen Chau Liu

doi:10.1149/1.2344845

A study of composite-passivation of an InGaPGaAs heterojunction bipolar transistor

Ssu I. Fu, Shiou Ying Cheng, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Chih Hung Yen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The temperature-dependent direct current (dc) characteristics and radio frequency performance of an InGaPGaAs heterojunction bipolar transistor with the composite passivations on base surface are studied and demonstrated. For comparison, the characteristics of other samples with different treatments on the base surfaces are also included in this work. The device with composite passivations, i.e., the ledge structure and sulfur treatment, shows the best performance and related thermal stabilities on dc current gain ΒF, base surface recombination current density JSR, and base current ideality factor nB. Experimentally, the device with composite passivations can be operated in the extremely low collector current (IC ≤ 10-9 A) regime with a useful current gain (Β_F >10). Moreover, this device exhibits improved microwave characteristics and hence is promising for low-power electronic and communication applications.

Original language	English
Article number	046611JES
Pages (from-to)	G938-G942
Journal	Journal of the Electrochemical Society
Volume	153
Issue number	11
DOIs	https://doi.org/10.1149/1.2344845
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2344845

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abstract = "The temperature-dependent direct current (dc) characteristics and radio frequency performance of an InGaPGaAs heterojunction bipolar transistor with the composite passivations on base surface are studied and demonstrated. For comparison, the characteristics of other samples with different treatments on the base surfaces are also included in this work. The device with composite passivations, i.e., the ledge structure and sulfur treatment, shows the best performance and related thermal stabilities on dc current gain ΒF, base surface recombination current density JSR, and base current ideality factor nB. Experimentally, the device with composite passivations can be operated in the extremely low collector current (IC ≤ 10-9 A) regime with a useful current gain (ΒF >10). Moreover, this device exhibits improved microwave characteristics and hence is promising for low-power electronic and communication applications.",

author = "Fu, {Ssu I.} and Cheng, {Shiou Ying} and Lai, {Po Hsien} and Tsai, {Yan Ying} and Hung, {Ching Wen} and Yen, {Chih Hung} and Liu, {Wen Chau}",

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AU - Fu, Ssu I.

AU - Cheng, Shiou Ying

AU - Lai, Po Hsien

AU - Tsai, Yan Ying

AU - Hung, Ching Wen

AU - Yen, Chih Hung

AU - Liu, Wen Chau

PY - 2006

Y1 - 2006

N2 - The temperature-dependent direct current (dc) characteristics and radio frequency performance of an InGaPGaAs heterojunction bipolar transistor with the composite passivations on base surface are studied and demonstrated. For comparison, the characteristics of other samples with different treatments on the base surfaces are also included in this work. The device with composite passivations, i.e., the ledge structure and sulfur treatment, shows the best performance and related thermal stabilities on dc current gain ΒF, base surface recombination current density JSR, and base current ideality factor nB. Experimentally, the device with composite passivations can be operated in the extremely low collector current (IC ≤ 10-9 A) regime with a useful current gain (ΒF >10). Moreover, this device exhibits improved microwave characteristics and hence is promising for low-power electronic and communication applications.

AB - The temperature-dependent direct current (dc) characteristics and radio frequency performance of an InGaPGaAs heterojunction bipolar transistor with the composite passivations on base surface are studied and demonstrated. For comparison, the characteristics of other samples with different treatments on the base surfaces are also included in this work. The device with composite passivations, i.e., the ledge structure and sulfur treatment, shows the best performance and related thermal stabilities on dc current gain ΒF, base surface recombination current density JSR, and base current ideality factor nB. Experimentally, the device with composite passivations can be operated in the extremely low collector current (IC ≤ 10-9 A) regime with a useful current gain (ΒF >10). Moreover, this device exhibits improved microwave characteristics and hence is promising for low-power electronic and communication applications.

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A study of composite-passivation of an InGaPGaAs heterojunction bipolar transistor

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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