A study of surface and interlayer structures of epitaxially grown group-III nitride compound films on Si(111) substrates by second-harmonic generation

Chau Shiu Chen, Juh Tzeng Lue, Chung Lin Wu, Shangjr Gwo, Kuang Yao Lo

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The symmetry behaviour of AlN/Si(111) and GaN/AlN/Si(111) structures grown by molecular beam epitaxy has been analysed by measuring the rotational dependence of the polarized second-harmonic generation (SHG) intensity for different polarized fundamental beams. The crystalline structure has also been checked by reflection high-energy electron diffraction, x-ray diffraction and photoluminescence spectroscopy. Considering various contributions of the nonlinear response from the bulk and interfaces, the interface strain implies an inhomogeneous intensity variation of SHG as a function of the surface azimuthal rotation angle Ψ. This result provides a valuable illustration of the epitaxy quality and growth parameter characterization by a nondestructive method.

Original languageEnglish
Pages (from-to)6537-6548
Number of pages12
JournalJournal of Physics Condensed Matter
Volume15
Issue number38
DOIs
Publication statusPublished - 2003 Oct 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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