Abstract
Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8%). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.% was a good candidate for TCO material (3.08 × 10-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.
| Original language | English |
|---|---|
| Pages (from-to) | 3667-3671 |
| Number of pages | 5 |
| Journal | Journal of Alloys and Compounds |
| Volume | 509 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2011 Feb 24 |
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All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
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A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system. / Chen, K. J.; Hung, F. Y.; Chang, S. J.; Chang, S. P.; Mai, Y. C.; Hu, Z. S.
In: Journal of Alloys and Compounds, Vol. 509, No. 8, 24.02.2011, p. 3667-3671.Research output: Contribution to journal › Article
TY - JOUR
T1 - A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system
AU - Chen, K. J.
AU - Hung, F. Y.
AU - Chang, S. J.
AU - Chang, S. P.
AU - Mai, Y. C.
AU - Hu, Z. S.
PY - 2011/2/24
Y1 - 2011/2/24
N2 - Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8%). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.% was a good candidate for TCO material (3.08 × 10-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.
AB - Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8%). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.% was a good candidate for TCO material (3.08 × 10-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.
UR - http://www.scopus.com/inward/record.url?scp=79551491493&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79551491493&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2010.12.155
DO - 10.1016/j.jallcom.2010.12.155
M3 - Article
AN - SCOPUS:79551491493
VL - 509
SP - 3667
EP - 3671
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
SN - 0925-8388
IS - 8
ER -