A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

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Abstract

Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8%). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.% was a good candidate for TCO material (3.08 × 10-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.

Original languageEnglish
Pages (from-to)3667-3671
Number of pages5
JournalJournal of Alloys and Compounds
Volume509
Issue number8
DOIs
Publication statusPublished - 2011 Feb 24

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Crystallization
Sputtering
Electric properties
Optical properties
Thin films
Opacity
Gases
Annealing
Oxygen
Electron mobility
Substrates
Temperature
Oxide films
Zinc
Photoluminescence
Heat treatment
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system",
abstract = "Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8{\%}). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.{\%} was a good candidate for TCO material (3.08 × 10-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.",
author = "Chen, {K. J.} and Hung, {F. Y.} and Chang, {S. J.} and Chang, {S. P.} and Mai, {Y. C.} and Hu, {Z. S.}",
year = "2011",
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TY - JOUR

T1 - A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

AU - Chen, K. J.

AU - Hung, F. Y.

AU - Chang, S. J.

AU - Chang, S. P.

AU - Mai, Y. C.

AU - Hu, Z. S.

PY - 2011/2/24

Y1 - 2011/2/24

N2 - Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8%). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.% was a good candidate for TCO material (3.08 × 10-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.

AB - Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8%). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.% was a good candidate for TCO material (3.08 × 10-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.

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