A study on electric properties for pulse laser annealing of ITO film after wet etching

C. J. Lee, H. K. Lin, C. H. Li, L. X. Chen, C. C. Lee, C. W. Wu, J. C. Huang

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The electric properties of ITO thin film after UV or IR laser annealing and wet etching was analyzed via grazing incidence in-plane X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectra and residual stress measurement. The laser annealing process readily induced microcracks or quasi-microcracks on the ITO thin film due to the residual tension stress of crystalline phase transformation between irradiated and non-irradiated areas, and these defects then became the preferred sites for a higher etching rate, resulting in discontinuities in the ITO thin film after the wet etching process. The discontinuities in the residual ITO thin film obstruct carrier transmission and further result in electric failure.

Original languageEnglish
Pages (from-to)330-335
Number of pages6
JournalThin Solid Films
Volume522
DOIs
Publication statusPublished - 2012 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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