A study on the plating and wetting ability of ruthenium-tungsten multi-layers for advanced Cu metallization

Tai Chen Kuo, Yin Hsien Su, Wen Hsi Lee, Wei Hsiang Liao, Yu Sheng Wang, Chi Cheng Hung, Ying Lang Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, the plating and wetting ability of Cu/Ruthenium-Tungsten (RuW)/silicon oxide (SiO2) multi-layer stacks were investigated. RuW alloy films were prepared on a SiO2 layer by sputtering, followed by a deposition of a Cu thin film by electroplating. Scanning electron microscopy (SEM) top view images shows that Cu films can be electroplated on RuW, with smaller Cu nuclei size but in a more highly concentrated and uniform distribution than Cu films electroplated on Ta or TaN. The rate of Cu nucleation decreases and larger Cu clusters were formed on the RuW alloy films with increasing W content. Cu/RuW/SiO2 samples were annealed at 400°C for 30 min and then characterized using SEM. There were fewer pin holes on the surface of a pure Cu/Ru stack compared to Cu/RuW multi-layers. Cu/RuW/SiO2 multi-layers had fewer pin holes than Cu/Ta/SiO2 structures processed under similar conditions. The wetting angle, measured by SEM, of Cu on a RuW substrate (43°) was still lower than that of Cu on a Ta substrate (123°), which suggests that the adhesion strength of Cu onto RuW alloy is better than that onto Ta.

Original languageEnglish
Title of host publication2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages168-170
Number of pages3
ISBN (Electronic)9781509003860
DOIs
Publication statusPublished - 2016 Jul 8
Event2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States
Duration: 2016 May 232016 May 26

Publication series

Name2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

Other

Other2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
CountryUnited States
CitySan Jose
Period16-05-2316-05-26

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films

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