Abstract
Ultra-low power SRAM is a promising memory for the next-generation electronics that focus on green and power-aware computing. Unfortunately, ultra-low power SRAM encounters serious timing uncertainty. One of the major problems is that the conventional voltage-clamping circuits cannot work when the bitlines have serious with-in-die variations. The full swing, usually required on the bitline, causes unwanted power dispassion. Therefore, this work proposes a novel SRAM cell that can clamp the bitline voltage autonomously. This voltage clamping is also independent in each bitline and is adapted automatically under dynamic voltage scaling. The dynamic power on bitline discharge can be saved by 75% by using the proposed structure, with an acceptable overhead in access time.
| Original language | English |
|---|---|
| Title of host publication | 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program |
| Pages | 150-153 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
| Event | 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Kaohsiung, Taiwan Duration: 2010 Nov 18 → 2010 Nov 19 |
Publication series
| Name | 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program |
|---|
Other
| Other | 2010 International Symposium on Next-Generation Electronics, ISNE 2010 |
|---|---|
| Country | Taiwan |
| City | Kaohsiung |
| Period | 10-11-18 → 10-11-19 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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A subthreshold SRAM cell with autonomous bitline-voltage clamping. / Luo, Shien Chun; Chiou, Lih-Yih.
2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 150-153 5669177 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A subthreshold SRAM cell with autonomous bitline-voltage clamping
AU - Luo, Shien Chun
AU - Chiou, Lih-Yih
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Ultra-low power SRAM is a promising memory for the next-generation electronics that focus on green and power-aware computing. Unfortunately, ultra-low power SRAM encounters serious timing uncertainty. One of the major problems is that the conventional voltage-clamping circuits cannot work when the bitlines have serious with-in-die variations. The full swing, usually required on the bitline, causes unwanted power dispassion. Therefore, this work proposes a novel SRAM cell that can clamp the bitline voltage autonomously. This voltage clamping is also independent in each bitline and is adapted automatically under dynamic voltage scaling. The dynamic power on bitline discharge can be saved by 75% by using the proposed structure, with an acceptable overhead in access time.
AB - Ultra-low power SRAM is a promising memory for the next-generation electronics that focus on green and power-aware computing. Unfortunately, ultra-low power SRAM encounters serious timing uncertainty. One of the major problems is that the conventional voltage-clamping circuits cannot work when the bitlines have serious with-in-die variations. The full swing, usually required on the bitline, causes unwanted power dispassion. Therefore, this work proposes a novel SRAM cell that can clamp the bitline voltage autonomously. This voltage clamping is also independent in each bitline and is adapted automatically under dynamic voltage scaling. The dynamic power on bitline discharge can be saved by 75% by using the proposed structure, with an acceptable overhead in access time.
UR - http://www.scopus.com/inward/record.url?scp=78751506661&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78751506661&partnerID=8YFLogxK
U2 - 10.1109/ISNE.2010.5669177
DO - 10.1109/ISNE.2010.5669177
M3 - Conference contribution
SN - 9781424466948
T3 - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
SP - 150
EP - 153
BT - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
ER -