A system for measuring deep-level spatial concentration distributions

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11 Citations (Scopus)

Abstract

A deep-level defect distribution profiling system using both analog and digital data-acquisition concepts is described. Analog circuits and digital data processing are used to provide high-speed acquisition and a high dynamic range, respectively. The implementation has an advantage of easy adaptation with an existing deep-level transient spectroscopy system having minimal software development. Additional advantages are the capabilities of eliminating long-term system drifts and superposition of data taken subsequently for averaging in order to conveniently achieve a desirable signal-to-noise margin. Several examples using ion-implanted n-type and p-type Si Schottky diodes are given. In addition, a metal-oxide-semiconductor field-effect transistor after a Si + implant and annealing at 600 C is illustrated to indicate a high surface-defect concentration due likely to the recoiling process.

Original languageEnglish
Pages (from-to)449-453
Number of pages5
JournalJournal of Applied Physics
Volume53
Issue number1
DOIs
Publication statusPublished - 1982

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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