Abstract
A deep-level defect distribution profiling system using both analog and digital data-acquisition concepts is described. Analog circuits and digital data processing are used to provide high-speed acquisition and a high dynamic range, respectively. The implementation has an advantage of easy adaptation with an existing deep-level transient spectroscopy system having minimal software development. Additional advantages are the capabilities of eliminating long-term system drifts and superposition of data taken subsequently for averaging in order to conveniently achieve a desirable signal-to-noise margin. Several examples using ion-implanted n-type and p-type Si Schottky diodes are given. In addition, a metal-oxide-semiconductor field-effect transistor after a Si + implant and annealing at 600 C is illustrated to indicate a high surface-defect concentration due likely to the recoiling process.
Original language | English |
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Pages (from-to) | 449-453 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 53 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1982 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)