A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior

W. C. Liu, W. C. Wang, C. H. Yen, C. C. Cheng, C. Z. Wu, W. H. Chiou, C. Y. Chuen

Research output: Contribution to journalConference articlepeer-review

Abstract

A new S-shaped switch based on the InP/InGaAlAs material system has been successfully fabricated and demonstrated. Due to the avalanche multiplication and potential redistribution process, the interesting multiple-negative-differential-resistance (MNDR) is found under the inverted operation mode at room temperature. The three-terminal NDR characteristics are investigated under the applied base current IB. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77K are also observed. The switching behaviors demonstrate that the proposed structure is a good candidate for multiple-valued logic applications.

Original languageEnglish
Pages (from-to)Pr3957-Pr3961
JournalJournal De Physique. IV : JP
Volume11
Issue number3
Publication statusPublished - 2001
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 2001 Aug 262001 Aug 31

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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