A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior

W. C. Liu; W. C. Wang; C. H. Yen; C. C. Cheng; C. Z. Wu; W. H. Chiou; C. Y. Chuen

A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior

W. C. Liu, W. C. Wang, C. H. Yen, C. C. Cheng, C. Z. Wu, W. H. Chiou, C. Y. Chuen

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new S-shaped switch based on the InP/InGaAlAs material system has been successfully fabricated and demonstrated. Due to the avalanche multiplication and potential redistribution process, the interesting multiple-negative-differential-resistance (MNDR) is found under the inverted operation mode at room temperature. The three-terminal NDR characteristics are investigated under the applied base current I_B. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77K are also observed. The switching behaviors demonstrate that the proposed structure is a good candidate for multiple-valued logic applications.

Original language	English
Pages (from-to)	Pr3957-Pr3961
Journal	Journal De Physique. IV : JP
Volume	11
Issue number	3
Publication status	Published - 2001
Event	13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece Duration: 2001 Aug 26 → 2001 Aug 31

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

@article{df03c668aa81475fb779fd27878f55c5,

title = "A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior",

abstract = "A new S-shaped switch based on the InP/InGaAlAs material system has been successfully fabricated and demonstrated. Due to the avalanche multiplication and potential redistribution process, the interesting multiple-negative-differential-resistance (MNDR) is found under the inverted operation mode at room temperature. The three-terminal NDR characteristics are investigated under the applied base current IB. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77K are also observed. The switching behaviors demonstrate that the proposed structure is a good candidate for multiple-valued logic applications.",

author = "Liu, {W. C.} and Wang, {W. C.} and Yen, {C. H.} and Cheng, {C. C.} and Wu, {C. Z.} and Chiou, {W. H.} and Chuen, {C. Y.}",

year = "2001",

language = "English",

volume = "11",

pages = "Pr3957--Pr3961",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "Springer Verlag",

number = "3",

note = "13th European Conference on Chemical Vapor Deposition (EUROCVD 13) ; Conference date: 26-08-2001 Through 31-08-2001",

}

TY - JOUR

T1 - A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior

AU - Liu, W. C.

AU - Wang, W. C.

AU - Yen, C. H.

AU - Cheng, C. C.

AU - Wu, C. Z.

AU - Chiou, W. H.

AU - Chuen, C. Y.

PY - 2001

Y1 - 2001

N2 - A new S-shaped switch based on the InP/InGaAlAs material system has been successfully fabricated and demonstrated. Due to the avalanche multiplication and potential redistribution process, the interesting multiple-negative-differential-resistance (MNDR) is found under the inverted operation mode at room temperature. The three-terminal NDR characteristics are investigated under the applied base current IB. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77K are also observed. The switching behaviors demonstrate that the proposed structure is a good candidate for multiple-valued logic applications.

AB - A new S-shaped switch based on the InP/InGaAlAs material system has been successfully fabricated and demonstrated. Due to the avalanche multiplication and potential redistribution process, the interesting multiple-negative-differential-resistance (MNDR) is found under the inverted operation mode at room temperature. The three-terminal NDR characteristics are investigated under the applied base current IB. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77K are also observed. The switching behaviors demonstrate that the proposed structure is a good candidate for multiple-valued logic applications.

UR - http://www.scopus.com/inward/record.url?scp=0034842604&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034842604&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034842604

SN - 1155-4339

VL - 11

SP - Pr3957-Pr3961

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 3

T2 - 13th European Conference on Chemical Vapor Deposition (EUROCVD 13)

Y2 - 26 August 2001 through 31 August 2001

ER -

A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior

Abstract

All Science Journal Classification (ASJC) codes

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