A new S-shaped switch based on the InP/InGaAlAs material system has been successfully fabricated and demonstrated. Due to the avalanche multiplication and potential redistribution process, the interesting multiple-negative-differential-resistance (MNDR) is found under the inverted operation mode at room temperature. The three-terminal NDR characteristics are investigated under the applied base current IB. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77K are also observed. The switching behaviors demonstrate that the proposed structure is a good candidate for multiple-valued logic applications.
|Journal||Journal De Physique. IV : JP|
|Publication status||Published - 2001 Jan 1|
|Event||13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece|
Duration: 2001 Aug 26 → 2001 Aug 31
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)