A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior

Wen-Chau Liu, W. C. Wang, C. H. Yen, C. C. Cheng, C. Z. Wu, W. H. Chiou, C. Y. Chuen

Research output: Contribution to journalConference article


A new S-shaped switch based on the InP/InGaAlAs material system has been successfully fabricated and demonstrated. Due to the avalanche multiplication and potential redistribution process, the interesting multiple-negative-differential-resistance (MNDR) is found under the inverted operation mode at room temperature. The three-terminal NDR characteristics are investigated under the applied base current IB. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77K are also observed. The switching behaviors demonstrate that the proposed structure is a good candidate for multiple-valued logic applications.

Original languageEnglish
JournalJournal De Physique. IV : JP
Issue number3
Publication statusPublished - 2001 Jan 1
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 2001 Aug 262001 Aug 31


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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