The temperature dependence on current-voltage characteristics of hydrogenated amorphous silicon thin-film transistors is investigated. Experiments have been performed from 304 to 404 K, while a theoretical model is proposed to explain the experimental data. In this model, the current-voltage characteristics of hydrogenated amorphous silicon thin-film transistors are derived from the Poisson's equation in which the temperature dependence on the concentration of the localized charges, the concentration of electrons in the conduction band, and the field-effect mobility of the electrons is considered. This proposed model conforms very well to the experimental data.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics