A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors

Bor Yir Chen, Jiann Ruey Chen, Fenq-Lin Jenq, Chum Sam Hong

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The temperature dependence on current-voltage characteristics of hydrogenated amorphous silicon thin-film transistors is investigated. Experiments have been performed from 304 to 404 K, while a theoretical model is proposed to explain the experimental data. In this model, the current-voltage characteristics of hydrogenated amorphous silicon thin-film transistors are derived from the Poisson's equation in which the temperature dependence on the concentration of the localized charges, the concentration of electrons in the conduction band, and the field-effect mobility of the electrons is considered. This proposed model conforms very well to the experimental data.

Original languageEnglish
Pages (from-to)276-279
Number of pages4
JournalMaterials Chemistry & Physics
Volume42
Issue number4
DOIs
Publication statusPublished - 1995 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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