TY - JOUR
T1 - A transient capacitance study of radiation‐induced defects in aluminum‐doped silicon
AU - Lee, Y. H.
AU - Wang, K. L.
AU - Jaworowski, A.
AU - Mooney, P. M.
AU - Cheng, L. J.
AU - Corbett, J. W.
N1 - Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 1980/2/16
Y1 - 1980/2/16
N2 - Diodes are fabricated from aluminum‐doped Czochralski‐grown silicon, are electron irradiated at room temperature, and are studied using the DLTS technique. The divacancy, the carbon interstitial, and the carbon–oxygen–vacancy complex, all previously observed in boron‐doped Cz silicon, are observed as well as several defects unique to aluminum‐doped silicon. The results are quite different from those reported for aluminum‐doped float zone silicon, however.
AB - Diodes are fabricated from aluminum‐doped Czochralski‐grown silicon, are electron irradiated at room temperature, and are studied using the DLTS technique. The divacancy, the carbon interstitial, and the carbon–oxygen–vacancy complex, all previously observed in boron‐doped Cz silicon, are observed as well as several defects unique to aluminum‐doped silicon. The results are quite different from those reported for aluminum‐doped float zone silicon, however.
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U2 - 10.1002/pssa.2210570228
DO - 10.1002/pssa.2210570228
M3 - Article
AN - SCOPUS:0018983691
SN - 0031-8965
VL - 57
SP - 697
EP - 704
JO - physica status solidi (a)
JF - physica status solidi (a)
IS - 2
ER -