A transient optical reflectivity study of laser annealing of ion-implanted silicon: Thresholds and kinetics

Y. S. Liu, K. L. Wang

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

By probing transient optical reflectivity, we have investigated the liquid phase epitaxial regrowth kinetics of ion-implanted silicon during laser annealing. For annealing of ion-implanted silicon with an 80-ns (FWHM) pulse of various intensities at 1.06 μm, the threshold energy density required for melting is observed to be a constant. Above this threshold value, annealing occurs via an amorphous-to-liquid-to-crystalline transition. Redistribution of As profiles as measured by He+ backscattering spectra is observed only when the incident energy density exceeds the threshold. Below this value, a reduction of dechanneled fraction is observed, but no dopant redistribution occurs. From the observed melting onset, a maximum heating rate of about 2×1010 deg sec-1 is observed.

Original languageEnglish
Pages (from-to)363-365
Number of pages3
JournalApplied Physics Letters
Volume34
Issue number6
DOIs
Publication statusPublished - 1979

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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