A transparent and conductive film prepared by RF magnetron cosputtering system at room temperature

Day Shan Liu; Chun Ching Wu; Ching Ting Lee

doi:10.1143/JJAP.44.5119

A transparent and conductive film prepared by RF magnetron cosputtering system at room temperature

Day Shan Liu, Chun Ching Wu, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The electrical and optical properties of transparent and conductive oxide films obtained from a cosputtering system with indium-tin oxide (ITO) and zinc oxide (ZnO) targets have been investigated. The resistivity of these ITO films deposited at an rf power of 150 W was markedly improved with additional simultaneous ZnO target cosputtering at rf powers ranging from 25 to 200 W. A transparent film of lowest resistivity (3.69 × 10^-4 Ω cm) was achieved at room temperature where the rf powers of the cosputtering for the ITO and ZnO targets were 150 and 75 W, respectively. The average transmittance obtained from these cosputtered films in the visible spectrum was over 80%.

Original language	English
Pages (from-to)	5119-5121
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	7 A
DOIs	https://doi.org/10.1143/JJAP.44.5119
Publication status	Published - 2005 Jul 8

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.44.5119

Fingerprint Dive into the research topics of 'A transparent and conductive film prepared by RF magnetron cosputtering system at room temperature'. Together they form a unique fingerprint.

Cite this

@article{46a0eb678608440581d9155e129cb451,

title = "A transparent and conductive film prepared by RF magnetron cosputtering system at room temperature",

abstract = "The electrical and optical properties of transparent and conductive oxide films obtained from a cosputtering system with indium-tin oxide (ITO) and zinc oxide (ZnO) targets have been investigated. The resistivity of these ITO films deposited at an rf power of 150 W was markedly improved with additional simultaneous ZnO target cosputtering at rf powers ranging from 25 to 200 W. A transparent film of lowest resistivity (3.69 × 10-4 Ω cm) was achieved at room temperature where the rf powers of the cosputtering for the ITO and ZnO targets were 150 and 75 W, respectively. The average transmittance obtained from these cosputtered films in the visible spectrum was over 80%.",

author = "Liu, {Day Shan} and Wu, {Chun Ching} and Lee, {Ching Ting}",

year = "2005",

month = jul,

day = "8",

doi = "10.1143/JJAP.44.5119",

language = "English",

volume = "44",

pages = "5119--5121",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 A",

}

TY - JOUR

T1 - A transparent and conductive film prepared by RF magnetron cosputtering system at room temperature

AU - Liu, Day Shan

AU - Wu, Chun Ching

AU - Lee, Ching Ting

PY - 2005/7/8

Y1 - 2005/7/8

N2 - The electrical and optical properties of transparent and conductive oxide films obtained from a cosputtering system with indium-tin oxide (ITO) and zinc oxide (ZnO) targets have been investigated. The resistivity of these ITO films deposited at an rf power of 150 W was markedly improved with additional simultaneous ZnO target cosputtering at rf powers ranging from 25 to 200 W. A transparent film of lowest resistivity (3.69 × 10-4 Ω cm) was achieved at room temperature where the rf powers of the cosputtering for the ITO and ZnO targets were 150 and 75 W, respectively. The average transmittance obtained from these cosputtered films in the visible spectrum was over 80%.

AB - The electrical and optical properties of transparent and conductive oxide films obtained from a cosputtering system with indium-tin oxide (ITO) and zinc oxide (ZnO) targets have been investigated. The resistivity of these ITO films deposited at an rf power of 150 W was markedly improved with additional simultaneous ZnO target cosputtering at rf powers ranging from 25 to 200 W. A transparent film of lowest resistivity (3.69 × 10-4 Ω cm) was achieved at room temperature where the rf powers of the cosputtering for the ITO and ZnO targets were 150 and 75 W, respectively. The average transmittance obtained from these cosputtered films in the visible spectrum was over 80%.

UR - http://www.scopus.com/inward/record.url?scp=31544443237&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31544443237&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.5119

DO - 10.1143/JJAP.44.5119

M3 - Article

AN - SCOPUS:31544443237

VL - 44

SP - 5119

EP - 5121

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 A

ER -