A Transparent Electrode Prepared by Co-sputtering System

Day Shan Liu, Chun Ching Wu, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

Abstract

The transparent electrode obtained from co-sputtering system with ITO and ZnO targets had been investigated. The resistivity was significant improved with an additional co-sputtered ZnO target compared to the individual ITO film. A lowest resistivity transparent film of 3.69 x 10-4 Ω-cm was achieved at room temperature as the rf power of co-sputtering system for ITO and ZnO targets being 150W and 75W, respectively. The average transmittance in visible wavelength was over 80% obtained from these co-sputtering films. The surface roughness of these co-sputtered films was also superior to individual ITO films attributed to amorphous formation prepared by co-sputtered ITO and ZnO targets.

Original languageEnglish
Pages (from-to)502-505
Number of pages4
JournalInternational Journal of Microwave and Optical Technology
Volume1
Issue number2-I
Publication statusPublished - 2006 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'A Transparent Electrode Prepared by Co-sputtering System'. Together they form a unique fingerprint.

Cite this