Abstract
The transparent electrode obtained from co-sputtering system with ITO and ZnO targets had been investigated. The resistivity was significant improved with an additional co-sputtered ZnO target compared to the individual ITO film. A lowest resistivity transparent film of 3.69 x 10-4 Ω-cm was achieved at room temperature as the rf power of co-sputtering system for ITO and ZnO targets being 150W and 75W, respectively. The average transmittance in visible wavelength was over 80% obtained from these co-sputtering films. The surface roughness of these co-sputtered films was also superior to individual ITO films attributed to amorphous formation prepared by co-sputtered ITO and ZnO targets.
Original language | English |
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Pages (from-to) | 502-505 |
Number of pages | 4 |
Journal | International Journal of Microwave and Optical Technology |
Volume | 1 |
Issue number | 2-I |
Publication status | Published - 2006 Aug |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering