We demonstrate a new GaAs regenerative switching device with a double triangular barrier (DTB) structure, i.e., p+-i- δ(n+)-i- δ(p+)-i-n+, prepared by molecular beam epitaxy (MBE). Using the concept of sequential collapse of the internal barriers, two distinctive switching regions are established. First, a negative resistance region (S-type) is observed, followed by a positive resistance region (inverted N-shape) in between the switching behavior with the increase of applied bias. This device may have applicability for tristate logic circuits.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)