A tristate switching device with double delta-doped quantum well structure

Wei Chou Hsu; Der Feng Guo; Wen Chau Liu; Wen Shiung Lour

doi:10.1016/0038-1101(93)90186-T

A tristate switching device with double delta-doped quantum well structure

Wei Chou Hsu, Der Feng Guo, Wen Chau Liu, Wen Shiung Lour

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A new tristate switching device, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. A double delta-doped quantum well structure was employed in the device studied. The intentionally different doping levels of δ(p⁺) and δ(n⁺) delta-doped sheets cause significantly different barrier heights for electron and hole injection. When external bias is applied, an interesting sequentially-double S-shaped negative-differential-resistance (NDR) phenomenon is observed. This introduces triple stable regimes of the device operation. Therefore, based on a proper design, the studied structure has a good potential for multiple-valued logic circuit applications.

Original language	English
Pages (from-to)	1089-1092
Number of pages	4
Journal	Solid State Electronics
Volume	36
Issue number	8
DOIs	https://doi.org/10.1016/0038-1101(93)90186-T
Publication status	Published - 1993 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(93)90186-T

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title = "A tristate switching device with double delta-doped quantum well structure",

abstract = "A new tristate switching device, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. A double delta-doped quantum well structure was employed in the device studied. The intentionally different doping levels of δ(p+) and δ(n+) delta-doped sheets cause significantly different barrier heights for electron and hole injection. When external bias is applied, an interesting sequentially-double S-shaped negative-differential-resistance (NDR) phenomenon is observed. This introduces triple stable regimes of the device operation. Therefore, based on a proper design, the studied structure has a good potential for multiple-valued logic circuit applications.",

author = "Hsu, {Wei Chou} and Guo, {Der Feng} and Liu, {Wen Chau} and Lour, {Wen Shiung}",

year = "1993",

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T1 - A tristate switching device with double delta-doped quantum well structure

AU - Hsu, Wei Chou

AU - Guo, Der Feng

AU - Liu, Wen Chau

AU - Lour, Wen Shiung

PY - 1993/8

Y1 - 1993/8

N2 - A new tristate switching device, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. A double delta-doped quantum well structure was employed in the device studied. The intentionally different doping levels of δ(p+) and δ(n+) delta-doped sheets cause significantly different barrier heights for electron and hole injection. When external bias is applied, an interesting sequentially-double S-shaped negative-differential-resistance (NDR) phenomenon is observed. This introduces triple stable regimes of the device operation. Therefore, based on a proper design, the studied structure has a good potential for multiple-valued logic circuit applications.

AB - A new tristate switching device, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. A double delta-doped quantum well structure was employed in the device studied. The intentionally different doping levels of δ(p+) and δ(n+) delta-doped sheets cause significantly different barrier heights for electron and hole injection. When external bias is applied, an interesting sequentially-double S-shaped negative-differential-resistance (NDR) phenomenon is observed. This introduces triple stable regimes of the device operation. Therefore, based on a proper design, the studied structure has a good potential for multiple-valued logic circuit applications.

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EP - 1092

JO - Solid State Electronics

JF - Solid State Electronics

IS - 8

ER -

A tristate switching device with double delta-doped quantum well structure

Abstract

All Science Journal Classification (ASJC) codes

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