@inproceedings{edd73a9af8a64176a6ab6696e2ba5032,
title = "A unified quantum scaling length model for nanometer multiple-gate MOSFETs",
abstract = "Based on the zero-point energy E0 induced by one-dimensional/two-dimensional (1-D/2-D) quantum confinement effects, a unified quantum scaling length model λQM is developed for the nanometer multiple-gate (MG) MOSFETs. It indicates that the quantum scaling length λQM is sensitive to the silicon thickness and the MG MOSFETs abiding by the quantum scaling curves will well control the threshold voltage variation AVth caused by QMEs. This model not only efficiently evaluates the nanometer MG MOSFETs according to the quantum scaling factor (αQM), but also provides the basic scaling theory for the device engineer to well design the nanometer MG MOSFETs.",
author = "Chiang, {Te Kuang} and Ko, {Ying Wen} and Lin, {Yu Hsuan} and Gao, {Hong Wun} and Wang, {Yeong Her}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",
year = "2018",
month = jun,
day = "22",
doi = "10.1109/ISNE.2018.8394743",
language = "English",
series = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--4",
booktitle = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
address = "United States",
}