A unified quantum scaling length model for nanometer multiple-gate MOSFETs

Te Kuang Chiang, Ying Wen Ko, Yu Hsuan Lin, Hong Wun Gao, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Based on the zero-point energy E0 induced by one-dimensional/two-dimensional (1-D/2-D) quantum confinement effects, a unified quantum scaling length model λQM is developed for the nanometer multiple-gate (MG) MOSFETs. It indicates that the quantum scaling length λQM is sensitive to the silicon thickness and the MG MOSFETs abiding by the quantum scaling curves will well control the threshold voltage variation AVth caused by QMEs. This model not only efficiently evaluates the nanometer MG MOSFETs according to the quantum scaling factor (αQM), but also provides the basic scaling theory for the device engineer to well design the nanometer MG MOSFETs.

Original languageEnglish
Title of host publicationProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538614457
DOIs
Publication statusPublished - 2018 Jun 22
Event7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
Duration: 2018 May 72018 May 9

Publication series

NameProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
CountryTaiwan
CityTaipei
Period18-05-0718-05-09

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Chiang, T. K., Ko, Y. W., Lin, Y. H., Gao, H. W., & Wang, Y. H. (2018). A unified quantum scaling length model for nanometer multiple-gate MOSFETs. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (pp. 1-4). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394743