A unified quantum scaling length model for nanometer multiple-gate MOSFETs

Te Kuang Chiang, Ying Wen Ko, Yu Hsuan Lin, Hong Wun Gao, Yeong-Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Based on the zero-point energy E0 induced by one-dimensional/two-dimensional (1-D/2-D) quantum confinement effects, a unified quantum scaling length model λQM is developed for the nanometer multiple-gate (MG) MOSFETs. It indicates that the quantum scaling length λQM is sensitive to the silicon thickness and the MG MOSFETs abiding by the quantum scaling curves will well control the threshold voltage variation AVth caused by QMEs. This model not only efficiently evaluates the nanometer MG MOSFETs according to the quantum scaling factor (αQM), but also provides the basic scaling theory for the device engineer to well design the nanometer MG MOSFETs.

Original languageEnglish
Title of host publicationProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538614457
DOIs
Publication statusPublished - 2018 Jun 22
Event7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
Duration: 2018 May 72018 May 9

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
CountryTaiwan
CityTaipei
Period18-05-0718-05-09

Fingerprint

field effect transistors
scaling
Quantum confinement
Silicon
Threshold voltage
Engineers
zero point energy
threshold voltage
engineers
silicon
curves

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Chiang, T. K., Ko, Y. W., Lin, Y. H., Gao, H. W., & Wang, Y-H. (2018). A unified quantum scaling length model for nanometer multiple-gate MOSFETs. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394743
Chiang, Te Kuang ; Ko, Ying Wen ; Lin, Yu Hsuan ; Gao, Hong Wun ; Wang, Yeong-Her. / A unified quantum scaling length model for nanometer multiple-gate MOSFETs. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
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abstract = "Based on the zero-point energy E0 induced by one-dimensional/two-dimensional (1-D/2-D) quantum confinement effects, a unified quantum scaling length model λQM is developed for the nanometer multiple-gate (MG) MOSFETs. It indicates that the quantum scaling length λQM is sensitive to the silicon thickness and the MG MOSFETs abiding by the quantum scaling curves will well control the threshold voltage variation AVth caused by QMEs. This model not only efficiently evaluates the nanometer MG MOSFETs according to the quantum scaling factor (αQM), but also provides the basic scaling theory for the device engineer to well design the nanometer MG MOSFETs.",
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Chiang, TK, Ko, YW, Lin, YH, Gao, HW & Wang, Y-H 2018, A unified quantum scaling length model for nanometer multiple-gate MOSFETs. in Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 7th International Symposium on Next-Generation Electronics, ISNE 2018, Taipei, Taiwan, 18-05-07. https://doi.org/10.1109/ISNE.2018.8394743

A unified quantum scaling length model for nanometer multiple-gate MOSFETs. / Chiang, Te Kuang; Ko, Ying Wen; Lin, Yu Hsuan; Gao, Hong Wun; Wang, Yeong-Her.

Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Based on the zero-point energy E0 induced by one-dimensional/two-dimensional (1-D/2-D) quantum confinement effects, a unified quantum scaling length model λQM is developed for the nanometer multiple-gate (MG) MOSFETs. It indicates that the quantum scaling length λQM is sensitive to the silicon thickness and the MG MOSFETs abiding by the quantum scaling curves will well control the threshold voltage variation AVth caused by QMEs. This model not only efficiently evaluates the nanometer MG MOSFETs according to the quantum scaling factor (αQM), but also provides the basic scaling theory for the device engineer to well design the nanometer MG MOSFETs.

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Chiang TK, Ko YW, Lin YH, Gao HW, Wang Y-H. A unified quantum scaling length model for nanometer multiple-gate MOSFETs. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.1109/ISNE.2018.8394743