A Unified Quasi-3D Subthreshold Behavior Model for Multiple-Gate mosfets

Juin J. Liou, Hong Wun Gao, Yeong Her Wang, Te Kuang Chiang

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2 Citations (Scopus)

Abstract

Based on the quasi-3D potential approach, a unified subthreshold-potential, threshold-voltage, and subthreshold-current model is developed for multiple-gate mosfets including a quadruple-gate, triple-gate, and omega-gate mosfet. This work indicates that the scaling-length-oriented subthreshold current roll-up ΔIsub and threshold voltage roll-off ΔVth provide the physical insight into well-controlled short-channel effects (SCEs) in terms of effective scaling length λeff according to the scaling factor. Besides the decreased minimum conducting channel potential ΦC,min, the smaller scaling-length-induced effective channel width/height (Weff/Heff) reflects the smaller effective conducting cross-sectional area, which reduces the subthreshold current degradation due to the increased subthreshold resistance Rsub. By accounting for the coupling factor in the quasi-3D potential approach, Weff, Heff, and ΦC,min will be increased to some extent to decrease Rsub, which, hence, degrades the subthreshold behavior more extensively in response to SCEs.

Original languageEnglish
Pages (from-to)763-771
Number of pages9
JournalIEEE Transactions on Nanotechnology
Volume17
Issue number4
DOIs
Publication statusPublished - 2018 Jul

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All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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