A V-band CMOS direct injection-locked frequency divider using forward body bias technology

Y. T. Chen, M. W. Li, T. H. Huang, Huey Ru Chuang

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

This letter presents a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology. The divider is implemented in a 0.13 μm CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 16.2% at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is -123.5 dBc/Hz at 500 KHz offset. The output power of the divider is higher than -9 dBm from 54 to 61 GHz, and a good figure of merit is achieved.

Original languageEnglish
Article number5483150
Pages (from-to)396-398
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume20
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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