A V-band CMOS direct injection-locked frequency divider using forward body bias technology

Y. T. Chen; M. W. Li; T. H. Huang; Huey Ru Chuang

doi:10.1109/LMWC.2010.2049436

A V-band CMOS direct injection-locked frequency divider using forward body bias technology

Y. T. Chen, M. W. Li, T. H. Huang, Huey Ru Chuang

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

This letter presents a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology. The divider is implemented in a 0.13 μm CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 16.2% at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is -123.5 dBc/Hz at 500 KHz offset. The output power of the divider is higher than -9 dBm from 54 to 61 GHz, and a good figure of merit is achieved.

Original language	English
Article number	5483150
Pages (from-to)	396-398
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	20
Issue number	7
DOIs	https://doi.org/10.1109/LMWC.2010.2049436
Publication status	Published - 2010 Jul 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2010.2049436

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abstract = "This letter presents a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology. The divider is implemented in a 0.13 μm CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 16.2% at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is -123.5 dBc/Hz at 500 KHz offset. The output power of the divider is higher than -9 dBm from 54 to 61 GHz, and a good figure of merit is achieved.",

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A V-band CMOS direct injection-locked frequency divider using forward body bias technology

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