A W-band Push-Push VCO with Gm-Boosted Colpitts Topology in 90-nm CMOS Technology

San Hsien Liu, Chen Ming Hung, Huey Ru Chuang, Tzuen Hsi Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a W-band push-push VCO design and implementation in 90-nm CMOS technology, which is expected to be used for a 94-GHz RF transceiver. The proposed VCO adopts a differential Colpitts topology with the drain to source (DS) feedback operating at fundamental frequency. This VCO is biased by a current-switching transistor pair with dynamic forward-body biasing technique. Thus, the negative conductance of VCO can be enhanced for reliable start-up. A greater W-band signal can be obtained by a gm-boosted doubler. In addition, the current-reuse technique realizes low power design. The center frequency of proposed VCO is 90.1 GHz with the tuning range of 2.24 %. This VCO provides the highest frequency of 91.11 GHz and the corresponding output power of-0.2 dBm. The VCO consumes 25.43 mW from a 1.8-V supply and exhibits the phase noise of-109.22 dBc/Hz and FOM of-174.3 at 10 MHz offset.

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665433914
DOIs
Publication statusPublished - 2021 Aug 25
Event2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan
Duration: 2021 Aug 252021 Aug 27

Publication series

Name2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Country/TerritoryTaiwan
CityHualien
Period21-08-2521-08-27

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

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