TY - JOUR
T1 - A WO3 nanoparticles NO gas sensor prepared by hot-wire CVD
AU - Lin, Chih Hung
AU - Chang, Shoou Jinn
AU - Hsueh, Ting Jen
N1 - Funding Information:
This work was supported in part by the National Science Council and in part by the National Nano Devices Laboratories, Tainan, Taiwan, under Contract 103-2221-E-492-047-MY3.
Publisher Copyright:
© 1980-2012 IEEE.
PY - 2017/2
Y1 - 2017/2
N2 - In this letter, a WO3 nanoparticle gas sensor was fabricated using an ICP-assisted hot wire system. The results of experiments indicated that the sensitivity became smaller when the measured temperature increased. It was also found that the WO3 nanoparticle gas sensor prepared at an annealing temperature of 400 °C had the greatest sensitivity. The measured sensitivity for a micro-electromechanical system type WO3 nanoparticle gas sensor was found to be around 3.22, 3.91, 5.02, 7.52, 11.68, and 15.93 when the operating temperature of the micro-heater was 150 °C and the concentration of injected NO gas was 100, 150, 200, 250, 300, and 350 ppb, respectively.
AB - In this letter, a WO3 nanoparticle gas sensor was fabricated using an ICP-assisted hot wire system. The results of experiments indicated that the sensitivity became smaller when the measured temperature increased. It was also found that the WO3 nanoparticle gas sensor prepared at an annealing temperature of 400 °C had the greatest sensitivity. The measured sensitivity for a micro-electromechanical system type WO3 nanoparticle gas sensor was found to be around 3.22, 3.91, 5.02, 7.52, 11.68, and 15.93 when the operating temperature of the micro-heater was 150 °C and the concentration of injected NO gas was 100, 150, 200, 250, 300, and 350 ppb, respectively.
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U2 - 10.1109/LED.2016.2647235
DO - 10.1109/LED.2016.2647235
M3 - Review article
AN - SCOPUS:85011263077
SN - 0741-3106
VL - 38
SP - 266
EP - 269
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 2
M1 - 7803548
ER -