A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide

S. J. Young, L. W. Ji, S. J. Chang, T. H. Meen, K. J. Chen

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.

Original languageEnglish
Article number035010
JournalSemiconductor Science and Technology
Issue number3
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide'. Together they form a unique fingerprint.

Cite this