A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide

S. J. Young; L. W. Ji; S. J. Chang; T. H. Meen; K. J. Chen

doi:10.1088/0268-1242/24/3/035010

A ZnO-based MOSFET with a photo-CVD SiO₂ gate oxide

S. J. Young, L. W. Ji, S. J. Chang, T. H. Meen, K. J. Chen

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We demonstrate that a high quality SiO₂ was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated I_ds and maximum G_m of the fabricated ZnO-based MOSFET were 61.1 mA mm^-1 and 10.2 mS mm^-1, respectively.

Original language	English
Article number	035010
Journal	Semiconductor Science and Technology
Volume	24
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/24/3/035010
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/24/3/035010

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title = "A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide",

abstract = "We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.",

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T1 - A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide

AU - Young, S. J.

AU - Ji, L. W.

AU - Chang, S. J.

AU - Meen, T. H.

AU - Chen, K. J.

PY - 2009

Y1 - 2009

N2 - We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.

AB - We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.

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JO - Semiconductor Science and Technology

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ER -

A ZnO-based MOSFET with a photo-CVD SiO₂ gate oxide

Abstract

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