A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide

S. J. Young, L. W. Ji, S. J. Chang, T. H. Meen, K. J. Chen

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.

Original languageEnglish
Article number035010
JournalSemiconductor Science and Technology
Volume24
Issue number3
DOIs
Publication statusPublished - 2009 Apr 16

Fingerprint

Vapor deposition
MOSFET devices
metal oxide semiconductors
Oxides
field effect transistors
vapor deposition
oxides
Metals
Field effect transistors
Leakage currents
metals
leakage
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide. / Young, S. J.; Ji, L. W.; Chang, S. J.; Meen, T. H.; Chen, K. J.

In: Semiconductor Science and Technology, Vol. 24, No. 3, 035010, 16.04.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide

AU - Young, S. J.

AU - Ji, L. W.

AU - Chang, S. J.

AU - Meen, T. H.

AU - Chen, K. J.

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AB - We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.

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