Abstract
We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.
Original language | English |
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Article number | 035010 |
Journal | Semiconductor Science and Technology |
Volume | 24 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2009 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry