Abstract
We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.
| Original language | English |
|---|---|
| Article number | 035010 |
| Journal | Semiconductor Science and Technology |
| Volume | 24 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2009 Apr 16 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide. / Young, S. J.; Ji, L. W.; Chang, S. J.; Meen, T. H.; Chen, K. J.
In: Semiconductor Science and Technology, Vol. 24, No. 3, 035010, 16.04.2009.Research output: Contribution to journal › Article
TY - JOUR
T1 - A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide
AU - Young, S. J.
AU - Ji, L. W.
AU - Chang, S. J.
AU - Meen, T. H.
AU - Chen, K. J.
PY - 2009/4/16
Y1 - 2009/4/16
N2 - We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.
AB - We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.
UR - http://www.scopus.com/inward/record.url?scp=64249157226&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=64249157226&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/24/3/035010
DO - 10.1088/0268-1242/24/3/035010
M3 - Article
AN - SCOPUS:64249157226
VL - 24
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 3
M1 - 035010
ER -