Abstract
In this paper, we report the growth of high-density single crystalline ZnO nanowires on patterned ZnO:Ga/SiO2/Si templates. A humidity sensor was then fabricated using the randomly oriented nanowires bridged across two electrodes. By measuring current-voltage characteristics of the fabricated device at 80°C, it was found that measured resistances were 5.9×105, 4.3×105, 3.7×105 and 3.2×105Ω when measured with 25%, 50%, 70% and 90% relative humidity, respectively.
Original language | English |
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Pages (from-to) | 772-778 |
Number of pages | 7 |
Journal | Superlattices and Microstructures |
Volume | 47 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2010 Jun |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering