A ZnO nanowire photodetector with an ir electrode integrated on a triple junction solar cell

Jei Li Hou; Shoou Jinn Chang; Sheng Po Chang

A ZnO nanowire photodetector with an ir electrode integrated on a triple junction solar cell

Jei Li Hou, Shoou Jinn Chang, Sheng Po Chang

Research output: Contribution to journal › Article › peer-review

Abstract

A ZnO nanowire ultraviolet photodetecto with an iridium electrode fabricated on a GaInP/GaAs/Ge triple-junction solar cell. The ZnO NW PD can detect the UV light below 370 nm without detecting solar light. It should be noted that solar light was transformed to electrical power by the TJ solar cell and provided a light bias of 2.5 V for the PD. At a light bias of 2.5 V, the UV-to-visible rejection ratio of the ZnO NW PD with an Ir Schottky contact electrode was around 396, and the measured responsivity was 5.54 times; 10^-4 A/W.

Original language	English
Pages (from-to)	5650-5656
Number of pages	7
Journal	International Journal of Electrochemical Science
Volume	8
Issue number	4
Publication status	Published - 2013 Apr

All Science Journal Classification (ASJC) codes

Electrochemistry

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title = "A ZnO nanowire photodetector with an ir electrode integrated on a triple junction solar cell",

abstract = "A ZnO nanowire ultraviolet photodetecto with an iridium electrode fabricated on a GaInP/GaAs/Ge triple-junction solar cell. The ZnO NW PD can detect the UV light below 370 nm without detecting solar light. It should be noted that solar light was transformed to electrical power by the TJ solar cell and provided a light bias of 2.5 V for the PD. At a light bias of 2.5 V, the UV-to-visible rejection ratio of the ZnO NW PD with an Ir Schottky contact electrode was around 396, and the measured responsivity was 5.54 times; 10-4 A/W.",

author = "Hou, {Jei Li} and Chang, {Shoou Jinn} and Chang, {Sheng Po}",

year = "2013",

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language = "English",

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pages = "5650--5656",

journal = "International Journal of Electrochemical Science",

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AU - Chang, Shoou Jinn

AU - Chang, Sheng Po

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N2 - A ZnO nanowire ultraviolet photodetecto with an iridium electrode fabricated on a GaInP/GaAs/Ge triple-junction solar cell. The ZnO NW PD can detect the UV light below 370 nm without detecting solar light. It should be noted that solar light was transformed to electrical power by the TJ solar cell and provided a light bias of 2.5 V for the PD. At a light bias of 2.5 V, the UV-to-visible rejection ratio of the ZnO NW PD with an Ir Schottky contact electrode was around 396, and the measured responsivity was 5.54 times; 10-4 A/W.

AB - A ZnO nanowire ultraviolet photodetecto with an iridium electrode fabricated on a GaInP/GaAs/Ge triple-junction solar cell. The ZnO NW PD can detect the UV light below 370 nm without detecting solar light. It should be noted that solar light was transformed to electrical power by the TJ solar cell and provided a light bias of 2.5 V for the PD. At a light bias of 2.5 V, the UV-to-visible rejection ratio of the ZnO NW PD with an Ir Schottky contact electrode was around 396, and the measured responsivity was 5.54 times; 10-4 A/W.

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