A zno-nanowire phototransistor prepared on glass substrates

W. Y. Weng; S. J. Chang; C. L. Hsu; T. J. Hsueh

doi:10.1021/am100746c

A zno-nanowire phototransistor prepared on glass substrates

W. Y. Weng, S. J. Chang, C. L. Hsu, T. J. Hsueh

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73 Citations (Scopus)

Abstract

The fabrication of a phototransistor via the bridging of two prefabricated electrodes with a laterally grown ZnO nanowire is reported. It was found that the fabricated device is an n-channel enhancement-mode phototransistor with a dark carrier concentration of 6.34×10¹⁷ cm^-3 when the gate voltage is biased at 5 V. With an incident-light wavelength of 360 nm and a zero gate bias, it was found that the noise equivalent power and normalized detectivity (D*) of the fabricated ZnOphototransistor were 6.67 × 10^-17 W and 1.27 × 10¹³ cm Hz^0.5 W^-1, respectively. It was also found that the current in the device can be modulated efficiently by tuning the wavelength of the excitation source.

Original language	English
Pages (from-to)	162-166
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	3
Issue number	2
DOIs	https://doi.org/10.1021/am100746c
Publication status	Published - 2011 Feb 23

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1021/am100746c

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abstract = "The fabrication of a phototransistor via the bridging of two prefabricated electrodes with a laterally grown ZnO nanowire is reported. It was found that the fabricated device is an n-channel enhancement-mode phototransistor with a dark carrier concentration of 6.34×1017 cm-3 when the gate voltage is biased at 5 V. With an incident-light wavelength of 360 nm and a zero gate bias, it was found that the noise equivalent power and normalized detectivity (D*) of the fabricated ZnOphototransistor were 6.67 × 10-17 W and 1.27 × 1013 cm Hz0.5 W-1, respectively. It was also found that the current in the device can be modulated efficiently by tuning the wavelength of the excitation source.",

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T1 - A zno-nanowire phototransistor prepared on glass substrates

AU - Weng, W. Y.

AU - Chang, S. J.

AU - Hsu, C. L.

AU - Hsueh, T. J.

PY - 2011/2/23

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N2 - The fabrication of a phototransistor via the bridging of two prefabricated electrodes with a laterally grown ZnO nanowire is reported. It was found that the fabricated device is an n-channel enhancement-mode phototransistor with a dark carrier concentration of 6.34×1017 cm-3 when the gate voltage is biased at 5 V. With an incident-light wavelength of 360 nm and a zero gate bias, it was found that the noise equivalent power and normalized detectivity (D*) of the fabricated ZnOphototransistor were 6.67 × 10-17 W and 1.27 × 1013 cm Hz0.5 W-1, respectively. It was also found that the current in the device can be modulated efficiently by tuning the wavelength of the excitation source.

AB - The fabrication of a phototransistor via the bridging of two prefabricated electrodes with a laterally grown ZnO nanowire is reported. It was found that the fabricated device is an n-channel enhancement-mode phototransistor with a dark carrier concentration of 6.34×1017 cm-3 when the gate voltage is biased at 5 V. With an incident-light wavelength of 360 nm and a zero gate bias, it was found that the noise equivalent power and normalized detectivity (D*) of the fabricated ZnOphototransistor were 6.67 × 10-17 W and 1.27 × 1013 cm Hz0.5 W-1, respectively. It was also found that the current in the device can be modulated efficiently by tuning the wavelength of the excitation source.

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A zno-nanowire phototransistor prepared on glass substrates

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