A zno-nanowire phototransistor prepared on glass substrates

W. Y. Weng, Shoou-Jinn Chang, C. L. Hsu, T. J. Hsueh

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

The fabrication of a phototransistor via the bridging of two prefabricated electrodes with a laterally grown ZnO nanowire is reported. It was found that the fabricated device is an n-channel enhancement-mode phototransistor with a dark carrier concentration of 6.34×1017 cm-3 when the gate voltage is biased at 5 V. With an incident-light wavelength of 360 nm and a zero gate bias, it was found that the noise equivalent power and normalized detectivity (D*) of the fabricated ZnOphototransistor were 6.67 × 10-17 W and 1.27 × 1013 cm Hz0.5 W-1, respectively. It was also found that the current in the device can be modulated efficiently by tuning the wavelength of the excitation source.

Original languageEnglish
Pages (from-to)162-166
Number of pages5
JournalACS Applied Materials and Interfaces
Volume3
Issue number2
DOIs
Publication statusPublished - 2011 Feb 23

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Phototransistors
Nanowires
Glass
Wavelength
Substrates
Carrier concentration
Tuning
Fabrication
Electrodes
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Weng, W. Y. ; Chang, Shoou-Jinn ; Hsu, C. L. ; Hsueh, T. J. / A zno-nanowire phototransistor prepared on glass substrates. In: ACS Applied Materials and Interfaces. 2011 ; Vol. 3, No. 2. pp. 162-166.
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A zno-nanowire phototransistor prepared on glass substrates. / Weng, W. Y.; Chang, Shoou-Jinn; Hsu, C. L.; Hsueh, T. J.

In: ACS Applied Materials and Interfaces, Vol. 3, No. 2, 23.02.2011, p. 162-166.

Research output: Contribution to journalArticle

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