A ZnO/InN/GaN heterojunction photodetector with extended infrared response

Lung Hsing Hsu, Shun Chieh Hsu, Hsin Ying Lee, Yu Lin Tsai, Da Wei Lin, Hao Chung Kuo, Yi Chia Hwang, Yin Han Chen, Jr Hau He, Yuh Jen Cheng, Shih Yen Lin, Chien Chung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO-SI 2015
PublisherOptical Society of America (OSA)
Number of pages1
ISBN (Electronic)9781557529688
DOIs
Publication statusPublished - 2015 May 4
EventCLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States
Duration: 2015 May 102015 May 15

Publication series

NameCLEO: Science and Innovations, CLEO-SI 2015

Other

OtherCLEO: Science and Innovations, CLEO-SI 2015
CountryUnited States
CitySan Jose
Period15-05-1015-05-15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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