A ZnO/InN/GaN heterojunction photodetector with extended infrared response

  • Lung Hsing Hsu
  • , Shun Chieh Hsu
  • , Hsin Ying Lee
  • , Yu Lin Tsai
  • , Da Wei Lin
  • , Hao Chung Kuo
  • , Yi Chia Hwang
  • , Yin Han Chen
  • , Jr Hau He
  • , Yuh Jen Cheng
  • , Shih Yen Lin
  • , Chien Chung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO-SI 2015
PublisherOptical Society of America (OSA)
Number of pages1
ISBN (Electronic)9781557529688
DOIs
Publication statusPublished - 2015 May 4
EventCLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States
Duration: 2015 May 102015 May 15

Publication series

NameCLEO: Science and Innovations, CLEO-SI 2015

Other

OtherCLEO: Science and Innovations, CLEO-SI 2015
Country/TerritoryUnited States
CitySan Jose
Period15-05-1015-05-15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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