A1GaN photodetectors prepared on Si substrates

Y. Z. Chiou, Yu-Cheng Lin, C. K. Wang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A1GaN ultraviolet (UV) metal-semiconductor-metal (MSM) photodetectors (PDs) grown on silicon substrates were fabricated and characterized. With 5-V applied bias, it was found that dark current density of Al0.2Ga 0.7N PDs on silicon substrate was only 7.5 X 10-9 A/cm2. With an applied bias of 7 V, it was found that peak responsivities were 0.09 and 0.11 A/W while UV/visible rejection ratios (i.e., peak wavelength: 420 nm) were 324 and 278 for Al0.2Ga0.8N and Al0.3Ga0.7N MSM PDs, respectively. Moreover, the noise equivalent power of Al0.2Ga0.8N MSM PDs was estimated to be 3.5 x 10-12W.

Original languageEnglish
Pages (from-to)264-266
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number4
DOIs
Publication statusPublished - 2007 Apr 1

Fingerprint

Photodetectors
Metals
Substrates
Silicon
Semiconductor materials
Dark currents
Current density
Wavelength

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chiou, Y. Z. ; Lin, Yu-Cheng ; Wang, C. K. / A1GaN photodetectors prepared on Si substrates. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 4. pp. 264-266.
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A1GaN photodetectors prepared on Si substrates. / Chiou, Y. Z.; Lin, Yu-Cheng; Wang, C. K.

In: IEEE Electron Device Letters, Vol. 28, No. 4, 01.04.2007, p. 264-266.

Research output: Contribution to journalArticle

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AU - Chiou, Y. Z.

AU - Lin, Yu-Cheng

AU - Wang, C. K.

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AB - A1GaN ultraviolet (UV) metal-semiconductor-metal (MSM) photodetectors (PDs) grown on silicon substrates were fabricated and characterized. With 5-V applied bias, it was found that dark current density of Al0.2Ga 0.7N PDs on silicon substrate was only 7.5 X 10-9 A/cm2. With an applied bias of 7 V, it was found that peak responsivities were 0.09 and 0.11 A/W while UV/visible rejection ratios (i.e., peak wavelength: 420 nm) were 324 and 278 for Al0.2Ga0.8N and Al0.3Ga0.7N MSM PDs, respectively. Moreover, the noise equivalent power of Al0.2Ga0.8N MSM PDs was estimated to be 3.5 x 10-12W.

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