Abstract
In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.
| Original language | English |
|---|---|
| Article number | 8736827 |
| Pages (from-to) | 1281-1284 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 40 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2019 Aug |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
}
Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer. / Chen, Hong Chih; Zhou, Kuan Ju; Chen, Po Hsun; Chen, Guan Fu; Huang, Shin Ping; Chen, Jian Jie; Kuo, Chuan Wei; Tsao, Yu Ching; Tai, Mao Chou; Chu, An Kuo; Lai, Wei Chih; Chang, Ting Chang.
In: IEEE Electron Device Letters, Vol. 40, No. 8, 8736827, 08.2019, p. 1281-1284.Research output: Contribution to journal › Article
TY - JOUR
T1 - Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer
AU - Chen, Hong Chih
AU - Zhou, Kuan Ju
AU - Chen, Po Hsun
AU - Chen, Guan Fu
AU - Huang, Shin Ping
AU - Chen, Jian Jie
AU - Kuo, Chuan Wei
AU - Tsao, Yu Ching
AU - Tai, Mao Chou
AU - Chu, An Kuo
AU - Lai, Wei Chih
AU - Chang, Ting Chang
PY - 2019/8
Y1 - 2019/8
N2 - In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.
AB - In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.
UR - http://www.scopus.com/inward/record.url?scp=85069841662&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85069841662&partnerID=8YFLogxK
U2 - 10.1109/LED.2019.2923098
DO - 10.1109/LED.2019.2923098
M3 - Article
AN - SCOPUS:85069841662
VL - 40
SP - 1281
EP - 1284
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 8
M1 - 8736827
ER -