Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

Hong Chih Chen, Kuan Ju Zhou, Po Hsun Chen, Guan Fu Chen, Shin Ping Huang, Jian Jie Chen, Chuan Wei Kuo, Yu Ching Tsao, Mao Chou Tai, An Kuo Chu, Wei-Chi Lai, Ting Chang Chang

Research output: Contribution to journalArticle

Abstract

In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.

Original languageEnglish
Article number8736827
Pages (from-to)1281-1284
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number8
DOIs
Publication statusPublished - 2019 Aug 1

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Thin film transistors
Shielding
Electric grounding
Threshold voltage
Computer aided design
Networks (circuits)
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chen, H. C., Zhou, K. J., Chen, P. H., Chen, G. F., Huang, S. P., Chen, J. J., ... Chang, T. C. (2019). Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer. IEEE Electron Device Letters, 40(8), 1281-1284. [8736827]. https://doi.org/10.1109/LED.2019.2923098
Chen, Hong Chih ; Zhou, Kuan Ju ; Chen, Po Hsun ; Chen, Guan Fu ; Huang, Shin Ping ; Chen, Jian Jie ; Kuo, Chuan Wei ; Tsao, Yu Ching ; Tai, Mao Chou ; Chu, An Kuo ; Lai, Wei-Chi ; Chang, Ting Chang. / Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer. In: IEEE Electron Device Letters. 2019 ; Vol. 40, No. 8. pp. 1281-1284.
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Chen, HC, Zhou, KJ, Chen, PH, Chen, GF, Huang, SP, Chen, JJ, Kuo, CW, Tsao, YC, Tai, MC, Chu, AK, Lai, W-C & Chang, TC 2019, 'Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer', IEEE Electron Device Letters, vol. 40, no. 8, 8736827, pp. 1281-1284. https://doi.org/10.1109/LED.2019.2923098

Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer. / Chen, Hong Chih; Zhou, Kuan Ju; Chen, Po Hsun; Chen, Guan Fu; Huang, Shin Ping; Chen, Jian Jie; Kuo, Chuan Wei; Tsao, Yu Ching; Tai, Mao Chou; Chu, An Kuo; Lai, Wei-Chi; Chang, Ting Chang.

In: IEEE Electron Device Letters, Vol. 40, No. 8, 8736827, 01.08.2019, p. 1281-1284.

Research output: Contribution to journalArticle

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AU - Chen, Hong Chih

AU - Zhou, Kuan Ju

AU - Chen, Po Hsun

AU - Chen, Guan Fu

AU - Huang, Shin Ping

AU - Chen, Jian Jie

AU - Kuo, Chuan Wei

AU - Tsao, Yu Ching

AU - Tai, Mao Chou

AU - Chu, An Kuo

AU - Lai, Wei-Chi

AU - Chang, Ting Chang

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