Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

Hong Chih Chen, Kuan Ju Zhou, Po Hsun Chen, Guan Fu Chen, Shin Ping Huang, Jian Jie Chen, Chuan Wei Kuo, Yu Ching Tsao, Mao Chou Tai, An Kuo Chu, Wei Chih Lai, Ting Chang Chang

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Abstract

In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.

Original languageEnglish
Article number8736827
Pages (from-to)1281-1284
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number8
DOIs
Publication statusPublished - 2019 Aug

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chen, H. C., Zhou, K. J., Chen, P. H., Chen, G. F., Huang, S. P., Chen, J. J., Kuo, C. W., Tsao, Y. C., Tai, M. C., Chu, A. K., Lai, W. C., & Chang, T. C. (2019). Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer. IEEE Electron Device Letters, 40(8), 1281-1284. [8736827]. https://doi.org/10.1109/LED.2019.2923098