Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

Hong Chih Chen; Kuan Ju Zhou; Po Hsun Chen; Guan Fu Chen; Shin Ping Huang; Jian Jie Chen; Chuan Wei Kuo; Yu Ching Tsao; Mao Chou Tai; An Kuo Chu; Wei Chih Lai; Ting Chang Chang

doi:10.1109/LED.2019.2923098

Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

Hong Chih Chen, Kuan Ju Zhou, Po Hsun Chen, Guan Fu Chen, Shin Ping Huang, Jian Jie Chen, Chuan Wei Kuo, Yu Ching Tsao, Mao Chou Tai, An Kuo Chu, Wei Chih Lai, Ting Chang Chang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal I_D-V_D output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on I_D-V_D characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.

Original language	English
Article number	8736827
Pages (from-to)	1281-1284
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	8
DOIs	https://doi.org/10.1109/LED.2019.2923098
Publication status	Published - 2019 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2019.2923098

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title = "Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer",

abstract = "In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.",

author = "Chen, {Hong Chih} and Zhou, {Kuan Ju} and Chen, {Po Hsun} and Chen, {Guan Fu} and Huang, {Shin Ping} and Chen, {Jian Jie} and Kuo, {Chuan Wei} and Tsao, {Yu Ching} and Tai, {Mao Chou} and Chu, {An Kuo} and Lai, {Wei Chih} and Chang, {Ting Chang}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2019",

month = aug,

doi = "10.1109/LED.2019.2923098",

language = "English",

volume = "40",

pages = "1281--1284",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

AU - Chen, Hong Chih

AU - Zhou, Kuan Ju

AU - Chen, Po Hsun

AU - Chen, Guan Fu

AU - Huang, Shin Ping

AU - Chen, Jian Jie

AU - Kuo, Chuan Wei

AU - Tsao, Yu Ching

AU - Tai, Mao Chou

AU - Chu, An Kuo

AU - Lai, Wei Chih

AU - Chang, Ting Chang

PY - 2019/8

Y1 - 2019/8

N2 - In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.

AB - In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.

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Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

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